Heteroepitaxial growth of ferromagnetic rutile Cox Ti1-x O2-δ on GaN (0001)

Yasushi Hirose; Taro Hitosugi; Junpei Kasai; Yutaka Furubayashi; Kiyomi Nakajima; Toyohiro Chikyow; Seiji Konuma; Toshihiro Shimada; Tetsuya Hasegawa

doi:10.1063/1.2838297

Heteroepitaxial growth of ferromagnetic rutile Cox Ti1-x O2-δ on GaN (0001)

Yasushi Hirose, Taro Hitosugi, Junpei Kasai, Yutaka Furubayashi, Kiyomi Nakajima, Toyohiro Chikyow, Seiji Konuma, Toshihiro Shimada, Tetsuya Hasegawa

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A rutile Cox Ti1-x O2-δ (100) film was heteroepitaxially grown on GaN (0001) by pulsed laser deposition. Magneto-optical Kerr effect and cross-sectional transmission electron microscope (TEM) measurements revealed that Co0.03 Ti0.97 O2-δ films prepared at an oxygen partial pressure of 10-6 - 10-5 Torr with a carrier density ne 3× 1018 cm-3 exhibit room-temperature ferromagnetism without any precipitates or secondary phase. High-resolution TEM observations confirmed that the interface between Cox Ti1-x O2-δ and GaN is atomically smooth without intermixing. These results lead us to conclude that Cox Ti1-x O2-δ is promising as a spin injector in GaN-based spin-electronic devices.

Original language	English
Article number	042503
Journal	Applied Physics Letters
Volume	92
Issue number	4
DOIs	https://doi.org/10.1063/1.2838297
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{0e5c297d076f4312899adc17eea26f9d,

title = "Heteroepitaxial growth of ferromagnetic rutile Cox Ti1-x O2-δ on GaN (0001)",

abstract = "A rutile Cox Ti1-x O2-δ (100) film was heteroepitaxially grown on GaN (0001) by pulsed laser deposition. Magneto-optical Kerr effect and cross-sectional transmission electron microscope (TEM) measurements revealed that Co0.03 Ti0.97 O2-δ films prepared at an oxygen partial pressure of 10-6 - 10-5 Torr with a carrier density ne 3× 1018 cm-3 exhibit room-temperature ferromagnetism without any precipitates or secondary phase. High-resolution TEM observations confirmed that the interface between Cox Ti1-x O2-δ and GaN is atomically smooth without intermixing. These results lead us to conclude that Cox Ti1-x O2-δ is promising as a spin injector in GaN-based spin-electronic devices.",

author = "Yasushi Hirose and Taro Hitosugi and Junpei Kasai and Yutaka Furubayashi and Kiyomi Nakajima and Toyohiro Chikyow and Seiji Konuma and Toshihiro Shimada and Tetsuya Hasegawa",

note = "Funding Information: This research was partially supported by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid for Young Scientists (B) 18760023, 2006 and the Murata Science Foundation.",

year = "2008",

doi = "10.1063/1.2838297",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Heteroepitaxial growth of ferromagnetic rutile Cox Ti1-x O2-δ on GaN (0001)

AU - Hirose, Yasushi

AU - Hitosugi, Taro

AU - Kasai, Junpei

AU - Furubayashi, Yutaka

AU - Nakajima, Kiyomi

AU - Chikyow, Toyohiro

AU - Konuma, Seiji

AU - Shimada, Toshihiro

AU - Hasegawa, Tetsuya

N1 - Funding Information: This research was partially supported by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid for Young Scientists (B) 18760023, 2006 and the Murata Science Foundation.

PY - 2008

Y1 - 2008

N2 - A rutile Cox Ti1-x O2-δ (100) film was heteroepitaxially grown on GaN (0001) by pulsed laser deposition. Magneto-optical Kerr effect and cross-sectional transmission electron microscope (TEM) measurements revealed that Co0.03 Ti0.97 O2-δ films prepared at an oxygen partial pressure of 10-6 - 10-5 Torr with a carrier density ne 3× 1018 cm-3 exhibit room-temperature ferromagnetism without any precipitates or secondary phase. High-resolution TEM observations confirmed that the interface between Cox Ti1-x O2-δ and GaN is atomically smooth without intermixing. These results lead us to conclude that Cox Ti1-x O2-δ is promising as a spin injector in GaN-based spin-electronic devices.

AB - A rutile Cox Ti1-x O2-δ (100) film was heteroepitaxially grown on GaN (0001) by pulsed laser deposition. Magneto-optical Kerr effect and cross-sectional transmission electron microscope (TEM) measurements revealed that Co0.03 Ti0.97 O2-δ films prepared at an oxygen partial pressure of 10-6 - 10-5 Torr with a carrier density ne 3× 1018 cm-3 exhibit room-temperature ferromagnetism without any precipitates or secondary phase. High-resolution TEM observations confirmed that the interface between Cox Ti1-x O2-δ and GaN is atomically smooth without intermixing. These results lead us to conclude that Cox Ti1-x O2-δ is promising as a spin injector in GaN-based spin-electronic devices.

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U2 - 10.1063/1.2838297

DO - 10.1063/1.2838297

M3 - Article

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VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 042503

ER -

Heteroepitaxial growth of ferromagnetic rutile Cox Ti1-x O2-δ on GaN (0001)

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