Heteroepitaxial growth of ferromagnetic rutile Cox Ti1-x O2-δ on GaN (0001)

Yasushi Hirose, Taro Hitosugi, Junpei Kasai, Yutaka Furubayashi, Kiyomi Nakajima, Toyohiro Chikyow, Seiji Konuma, Toshihiro Shimada, Tetsuya Hasegawa

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Abstract

A rutile Cox Ti1-x O2-δ (100) film was heteroepitaxially grown on GaN (0001) by pulsed laser deposition. Magneto-optical Kerr effect and cross-sectional transmission electron microscope (TEM) measurements revealed that Co0.03 Ti0.97 O2-δ films prepared at an oxygen partial pressure of 10-6 - 10-5 Torr with a carrier density ne 3× 1018 cm-3 exhibit room-temperature ferromagnetism without any precipitates or secondary phase. High-resolution TEM observations confirmed that the interface between Cox Ti1-x O2-δ and GaN is atomically smooth without intermixing. These results lead us to conclude that Cox Ti1-x O2-δ is promising as a spin injector in GaN-based spin-electronic devices.

Original languageEnglish
Article number042503
JournalApplied Physics Letters
Volume92
Issue number4
DOIs
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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