A rutile Cox Ti1-x O2-δ (100) film was heteroepitaxially grown on GaN (0001) by pulsed laser deposition. Magneto-optical Kerr effect and cross-sectional transmission electron microscope (TEM) measurements revealed that Co0.03 Ti0.97 O2-δ films prepared at an oxygen partial pressure of 10-6 - 10-5 Torr with a carrier density ne 3× 1018 cm-3 exhibit room-temperature ferromagnetism without any precipitates or secondary phase. High-resolution TEM observations confirmed that the interface between Cox Ti1-x O2-δ and GaN is atomically smooth without intermixing. These results lead us to conclude that Cox Ti1-x O2-δ is promising as a spin injector in GaN-based spin-electronic devices.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)