Heteroepitaxial growth of cugas2 layers by low-pressure metalorganic chemical vapor deposition

Shigefusa Chichibu, Sho Shirakata, Mei Uchida, Yoshiyuki Harada, Toshio Wakiyama, Satoru Matsumoto, Hirofumi Higuchi, Shigehiro Isomura

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22 Citations (Scopus)


Heteroepitaxial growth of CuGaS2 was studied by low-pressure metalorganic chemical vapor deposition using normal-tripropylgallium as a new Ga precursor, combined with cyclopentadienylcoppertriethylphosphine and ditertiarybutylsulfide. Structural and optical properties were characterized in detail. The epilayer showed the c[001]-oriented growth on both GaAs(001) and GaP(001) substrates. The lattice parameter c of the epilayers was smaller than that of the bulk single crystal. Magnitude of the residual lattice strain for CuGaS2/GaP(001) was found to be larger than that for CuGaS2/GaAs(001), even though the lattice mismatch for the former was smaller than that for the latter. The strain is considered to be introduced during cooling after the growth. A photoluminescence peak at 2.493 eV (8 K) was assigned to a free exciton emission, because the peak energy agreed with A-exciton energy obtained from photoreflectance spectra.

Original languageEnglish
Pages (from-to)3991-3997
Number of pages7
JournalJapanese journal of applied physics
Issue number8 R
Publication statusPublished - 1995 Aug
Externally publishedYes


  • Chalcopyrite compounds
  • CuGaS
  • Exciton emission
  • Lattice strain
  • Normal-tripropylgallium

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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