Heteroepitaxial growth of β-LiGaO 2 thin films on ZnO

I. Ohkubo, C. Hirose, K. Tamura, J. Nishii, H. Saito, H. Koinuma, P. Ahemt, T. Chikyow, T. Ishii, S. Miyazawa, Y. Segawa, T. Fukumura, M. Kawasaki

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

High-quality interface between an insulator and ZnO as a wide-band-gap semiconductor should realize devices based on field-effect carrier modulation or superlattices having large band offset over 1 eV. We demonstrate that LiGaO 2 could be a possible candidate for this purpose. Heteroepitaxy of LiGaO 2 is demonstrated on ZnO films, giving atomically sharp interface and fairly good exciton-related optical properties in the ZnO under layer. Although slight distortion of a basal-plane hexagon with a lattice mismatch of about 3% in LiGaO 2 gives multidomain epitaxial structure with relaxed lattices, a possible solution is proposed to realize coherent heterointerface.

Original languageEnglish
Pages (from-to)5587-5589
Number of pages3
JournalJournal of Applied Physics
Volume92
Issue number9
DOIs
Publication statusPublished - 2002 Nov 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Heteroepitaxial growth of β-LiGaO <sub>2</sub> thin films on ZnO'. Together they form a unique fingerprint.

  • Cite this

    Ohkubo, I., Hirose, C., Tamura, K., Nishii, J., Saito, H., Koinuma, H., Ahemt, P., Chikyow, T., Ishii, T., Miyazawa, S., Segawa, Y., Fukumura, T., & Kawasaki, M. (2002). Heteroepitaxial growth of β-LiGaO 2 thin films on ZnO. Journal of Applied Physics, 92(9), 5587-5589. https://doi.org/10.1063/1.1512311