Heteroepitaxial growth and luminescence properties of non-polar (1 1 0) orientation ZnO films on Si(0 0 1) substrates by pulsed laser deposition

Y. W. Zhang, X. M. Li, W. D. Yu, C. Yang, X. Cao, X. D. Gao, J. F. Kong, W. Z. Shen, J. L. Zhao, X. W. Sun

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11 Citations (Scopus)

Abstract

Epitaxial growth of a ZnO(1 1 0)/STO(0 0 1)/TiN(0 0 1)/Si(0 0 1) heterostructure has first been demonstrated on a Si(0 0 1) substrate by pulsed laser deposition. The growth process was monitored in situ by reflection high-energy electron diffraction, and the epitaxial orientation relationship was further confirmed by ex situ x-ray diffraction analysis. Results show that the high (1 1 0) oriented ZnO films are in domain-growth mode, and composed of two kinds of domains with their c-axes perpendicular to each other along STO〈1 1 0〉. The excitation-density-dependent photoluminescence spectra analyses at 83 K indicate that the ZnO films have good optical quality with low defect density, and no significant deep-level emission is detected. The strong near-band-edge luminescence consists of several acceptor-related emissions such as the acceptor-bound exciton emission (3.352 eV), the free electron-acceptor emission (3.318 eV) and the donor-acceptor-pair emission (3.248 eV). The presence of these acceptor-related emissions in undoped ZnO films should be attributed to structural acceptor defects, which are mainly caused by the domain-growth mode in this case.

Original languageEnglish
Article number075410
JournalJournal of Physics D: Applied Physics
Volume42
Issue number7
DOIs
Publication statusPublished - 2009 Apr 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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