Hetero-interface-trap generation due to hot carriers in SiGe/Si-hetero-MOSFETs

Toshiaki Tsuchiya, M. Sakuraba, Junich Murota

Research output: Contribution to journalArticlepeer-review

Abstract

It is reported for the first time that hot-carrier-induced degradation occurs in a SiGe/Si heterostructure introduced into the channel region of SiGe/Si-hetero-MOSFETs, using a newly established elaborate low-temperature charge pumping (LTCP) technique. Moreover, the hetero-interface trap density generated and the width of the degraded region are estimated from the LTCP characteristics, These results will enable new levels of improvement to the performance and reliability of strained-Si and SiGe devices.

Original languageEnglish
Pages (from-to)6+1101-1106
JournalIEEJ Transactions on Electronics, Information and Systems
Volume126
Issue number9
DOIs
Publication statusPublished - 2006

Keywords

  • Charge pumping technique
  • Hetero-interface trap
  • Hot carrier
  • MOSFET
  • SiGe

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Hetero-interface-trap generation due to hot carriers in SiGe/Si-hetero-MOSFETs'. Together they form a unique fingerprint.

Cite this