Hetero-integration of β-Ga2O3 and Diamond substrates by hydrophilic bonding technique

Takashi Matsumae; Yuichi Kurashima; Hideki Takagi; Hitoshi Umezawa; Koji Tanaka; Toshimitsu Ito; Hideyuki Watanabe; Eiji Higurashi

doi:10.1149/09804.0017ecst

Hetero-integration of β-Ga₂O₃ and Diamond substrates by hydrophilic bonding technique

Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Hitoshi Umezawa, Koji Tanaka, Toshimitsu Ito, Hideyuki Watanabe, Eiji Higurashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A β-Ga₂O₃ film was directly bonded on a diamond substrate at 250 ºC under atmospheric conditions. Before bonding, the β-Ga₂O₃ surface was activated by oxygen plasma irradiation, while the diamond surface was cleaned with H₂SO₄/H₂O₂ and NH₃/H₂O₂ mixtures. The β-Ga₂O₃ and diamond surfaces adhered to one another under atmospheric conditions. By annealing the contacted specimen at 250 ºC, they formed atomic bonds without voids, cracks, or severe crystallinity damages. It is believed that the direct bonding of β-Ga₂O₃ and diamond can facilitate the ultra-wide bandgap power electronics.

Original language	English
Title of host publication	PRiME 2020
Subtitle of host publication	Semiconductor Wafer Bonding: Science, Technology, and Applications 16
Editors	R. Knechtel, C. S. Tan, T. Suga, H. Baumgart, M. S. Goorsky, F. Fournel, K. D. Hobart, F. Roozeboom
Publisher	IOP Publishing Ltd.
Pages	17-20
Number of pages	4
Edition	4
ISBN (Electronic)	9781607688990
DOIs	https://doi.org/10.1149/09804.0017ecst
Publication status	Published - 2020
Externally published	Yes
Event	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States Duration: 2020 Oct 4 → 2020 Oct 9

Publication series

Name	ECS Transactions
Number	4
Volume	98
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
Country/Territory	United States
City	Honolulu
Period	20/10/4 → 20/10/9

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/09804.0017ecst

Cite this

Matsumae, T., Kurashima, Y., Takagi, H., Umezawa, H., Tanaka, K., Ito, T., Watanabe, H., & Higurashi, E. (2020). Hetero-integration of β-Ga₂O₃ and Diamond substrates by hydrophilic bonding technique. In R. Knechtel, C. S. Tan, T. Suga, H. Baumgart, M. S. Goorsky, F. Fournel, K. D. Hobart, & F. Roozeboom (Eds.), PRiME 2020: Semiconductor Wafer Bonding: Science, Technology, and Applications 16 (4 ed., pp. 17-20). (ECS Transactions; Vol. 98, No. 4). IOP Publishing Ltd.. https://doi.org/10.1149/09804.0017ecst

Hetero-integration of β-Ga₂O₃ and Diamond substrates by hydrophilic bonding technique. / Matsumae, Takashi; Kurashima, Yuichi; Takagi, Hideki et al.

PRiME 2020: Semiconductor Wafer Bonding: Science, Technology, and Applications 16. ed. / R. Knechtel; C. S. Tan; T. Suga; H. Baumgart; M. S. Goorsky; F. Fournel; K. D. Hobart; F. Roozeboom. 4. ed. IOP Publishing Ltd., 2020. p. 17-20 (ECS Transactions; Vol. 98, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsumae, T, Kurashima, Y, Takagi, H, Umezawa, H, Tanaka, K, Ito, T, Watanabe, H & Higurashi, E 2020, Hetero-integration of β-Ga₂O₃ and Diamond substrates by hydrophilic bonding technique. in R Knechtel, CS Tan, T Suga, H Baumgart, MS Goorsky, F Fournel, KD Hobart & F Roozeboom (eds), PRiME 2020: Semiconductor Wafer Bonding: Science, Technology, and Applications 16. 4 edn, ECS Transactions, no. 4, vol. 98, IOP Publishing Ltd., pp. 17-20, Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200, Honolulu, United States, 20/10/4. https://doi.org/10.1149/09804.0017ecst

Matsumae T, Kurashima Y, Takagi H, Umezawa H, Tanaka K, Ito T et al. Hetero-integration of β-Ga₂O₃ and Diamond substrates by hydrophilic bonding technique. In Knechtel R, Tan CS, Suga T, Baumgart H, Goorsky MS, Fournel F, Hobart KD, Roozeboom F, editors, PRiME 2020: Semiconductor Wafer Bonding: Science, Technology, and Applications 16. 4 ed. IOP Publishing Ltd. 2020. p. 17-20. (ECS Transactions; 4). doi: 10.1149/09804.0017ecst

Matsumae, Takashi ; Kurashima, Yuichi ; Takagi, Hideki et al. / Hetero-integration of β-Ga₂O₃ and Diamond substrates by hydrophilic bonding technique. PRiME 2020: Semiconductor Wafer Bonding: Science, Technology, and Applications 16. editor / R. Knechtel ; C. S. Tan ; T. Suga ; H. Baumgart ; M. S. Goorsky ; F. Fournel ; K. D. Hobart ; F. Roozeboom. 4. ed. IOP Publishing Ltd., 2020. pp. 17-20 (ECS Transactions; 4).

@inproceedings{d8c11641a9134545b7ce36c29372308a,

title = "Hetero-integration of β-Ga2O3 and Diamond substrates by hydrophilic bonding technique",

abstract = "A β-Ga2O3 film was directly bonded on a diamond substrate at 250 ºC under atmospheric conditions. Before bonding, the β-Ga2O3 surface was activated by oxygen plasma irradiation, while the diamond surface was cleaned with H2SO4/H2O2 and NH3/H2O2 mixtures. The β-Ga2O3 and diamond surfaces adhered to one another under atmospheric conditions. By annealing the contacted specimen at 250 ºC, they formed atomic bonds without voids, cracks, or severe crystallinity damages. It is believed that the direct bonding of β-Ga2O3 and diamond can facilitate the ultra-wide bandgap power electronics.",

author = "Takashi Matsumae and Yuichi Kurashima and Hideki Takagi and Hitoshi Umezawa and Koji Tanaka and Toshimitsu Ito and Hideyuki Watanabe and Eiji Higurashi",

note = "Funding Information: This work was supported by JSPS KAKENHI Grant Number 20K15044. Publisher Copyright: {\textcopyright} The Electrochemical Society; Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 ; Conference date: 04-10-2020 Through 09-10-2020",

year = "2020",

doi = "10.1149/09804.0017ecst",

language = "English",

series = "ECS Transactions",

publisher = "IOP Publishing Ltd.",

number = "4",

pages = "17--20",

editor = "R. Knechtel and Tan, {C. S.} and T. Suga and H. Baumgart and Goorsky, {M. S.} and F. Fournel and Hobart, {K. D.} and F. Roozeboom",

booktitle = "PRiME 2020",

address = "United Kingdom",

edition = "4",

}

TY - GEN

T1 - Hetero-integration of β-Ga2O3 and Diamond substrates by hydrophilic bonding technique

AU - Matsumae, Takashi

AU - Kurashima, Yuichi

AU - Takagi, Hideki

AU - Umezawa, Hitoshi

AU - Tanaka, Koji

AU - Ito, Toshimitsu

AU - Watanabe, Hideyuki

AU - Higurashi, Eiji

N1 - Funding Information: This work was supported by JSPS KAKENHI Grant Number 20K15044. Publisher Copyright: © The Electrochemical Society

PY - 2020

Y1 - 2020

N2 - A β-Ga2O3 film was directly bonded on a diamond substrate at 250 ºC under atmospheric conditions. Before bonding, the β-Ga2O3 surface was activated by oxygen plasma irradiation, while the diamond surface was cleaned with H2SO4/H2O2 and NH3/H2O2 mixtures. The β-Ga2O3 and diamond surfaces adhered to one another under atmospheric conditions. By annealing the contacted specimen at 250 ºC, they formed atomic bonds without voids, cracks, or severe crystallinity damages. It is believed that the direct bonding of β-Ga2O3 and diamond can facilitate the ultra-wide bandgap power electronics.

AB - A β-Ga2O3 film was directly bonded on a diamond substrate at 250 ºC under atmospheric conditions. Before bonding, the β-Ga2O3 surface was activated by oxygen plasma irradiation, while the diamond surface was cleaned with H2SO4/H2O2 and NH3/H2O2 mixtures. The β-Ga2O3 and diamond surfaces adhered to one another under atmospheric conditions. By annealing the contacted specimen at 250 ºC, they formed atomic bonds without voids, cracks, or severe crystallinity damages. It is believed that the direct bonding of β-Ga2O3 and diamond can facilitate the ultra-wide bandgap power electronics.

UR - http://www.scopus.com/inward/record.url?scp=85092692421&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85092692421&partnerID=8YFLogxK

U2 - 10.1149/09804.0017ecst

DO - 10.1149/09804.0017ecst

M3 - Conference contribution

AN - SCOPUS:85092692421

T3 - ECS Transactions

SP - 17

EP - 20

BT - PRiME 2020

A2 - Knechtel, R.

A2 - Tan, C. S.

A2 - Suga, T.

A2 - Baumgart, H.

A2 - Goorsky, M. S.

A2 - Fournel, F.

A2 - Hobart, K. D.

A2 - Roozeboom, F.

PB - IOP Publishing Ltd.

T2 - Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200

Y2 - 4 October 2020 through 9 October 2020

ER -