Hetero-epitaxial growth of ZnO film by temperature-modulated metalorganic chemical vapor deposition

Eiji Fujimoto, Masatomo Sumiya, Tsuyoshi Ohnishi, Kenji Watanabe, Mikk Lippmaa, Yuji Matsumoto, Hideomi Koinuma

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


ZnO films were fabricated by metalorganic chemical vapor deposition while a laser substrate heating system was used to rapidly cycle the sample temperature. When a hydrogen gas atmosphere was used together with the temperature modulation, ZnO films deposited from diethyl-zinc and oxygen exhibited oxygen-face polarity and a smooth surface. The quality of ZnO films was good enough to observe phonon replicas corresponding to the transition from donor-bound to free exciten in the temperature dependence of photoluminescence. The growth of ZnO film is discussed in relation to the combined effect of growth temperature modulation and the hydrogen atmosphere.

Original languageEnglish
Pages (from-to)455021-455023
Number of pages3
JournalApplied Physics Express
Issue number4
Publication statusPublished - 2009 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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