HEMT-based nanometer devices toward terahertz era

Eiichi Sano; Taiichi Otsuji

doi:10.1142/S0129156407004709

HEMT-based nanometer devices toward terahertz era

Eiichi Sano, Taiichi Otsuji

Broadband Engineering Division

Research output: Contribution to journal › Article

Abstract

The terahertz region is one of the unexplored bands. This paper first reviews the present status of conventional high-speed devices, especially InP-based high electron mobility transistors (HEMTs), and addresses the technological problems facing the goal of terahertz operation. As an alternative approach to solve these problems, we developed a plasmon-resonant photomixer for realizing a coherent terahertz continuous-wave source. Preliminary results on electromagnetic response to impulsive photoexcitation at room temperature are reported briefly.

Original language	English
Pages (from-to)	509-520
Number of pages	12
Journal	International Journal of High Speed Electronics and Systems
Volume	17
Issue number	3
DOIs	https://doi.org/10.1142/S0129156407004709
Publication status	Published - 2007 Sep 1

Keywords

HEMT
Photomixer
Plasmon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

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Sano, E., & Otsuji, T. (2007). HEMT-based nanometer devices toward terahertz era. International Journal of High Speed Electronics and Systems, 17(3), 509-520. https://doi.org/10.1142/S0129156407004709

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