HEMT-based nanometer devices toward terahertz era

Eiichi Sano, Taiichi Otsuji

Research output: Contribution to journalArticle

Abstract

The terahertz region is one of the unexplored bands. This paper first reviews the present status of conventional high-speed devices, especially InP-based high electron mobility transistors (HEMTs), and addresses the technological problems facing the goal of terahertz operation. As an alternative approach to solve these problems, we developed a plasmon-resonant photomixer for realizing a coherent terahertz continuous-wave source. Preliminary results on electromagnetic response to impulsive photoexcitation at room temperature are reported briefly.

Original languageEnglish
Pages (from-to)509-520
Number of pages12
JournalInternational Journal of High Speed Electronics and Systems
Volume17
Issue number3
DOIs
Publication statusPublished - 2007 Sep 1

Keywords

  • HEMT
  • Photomixer
  • Plasmon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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