HEMT-based nanometer devices toward terahertz era

Eiichi Sano; Taiichi Otsuji

doi:10.1142/S0129156407004709

HEMT-based nanometer devices toward terahertz era

Eiichi Sano, Taiichi Otsuji

Broadband Engineering Division

Research output: Contribution to journal › Article › peer-review

Abstract

The terahertz region is one of the unexplored bands. This paper first reviews the present status of conventional high-speed devices, especially InP-based high electron mobility transistors (HEMTs), and addresses the technological problems facing the goal of terahertz operation. As an alternative approach to solve these problems, we developed a plasmon-resonant photomixer for realizing a coherent terahertz continuous-wave source. Preliminary results on electromagnetic response to impulsive photoexcitation at room temperature are reported briefly.

Original language	English
Pages (from-to)	509-520
Number of pages	12
Journal	International Journal of High Speed Electronics and Systems
Volume	17
Issue number	3
DOIs	https://doi.org/10.1142/S0129156407004709
Publication status	Published - 2007 Sep

Keywords

HEMT
Photomixer
Plasmon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

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10.1142/S0129156407004709

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title = "HEMT-based nanometer devices toward terahertz era",

abstract = "The terahertz region is one of the unexplored bands. This paper first reviews the present status of conventional high-speed devices, especially InP-based high electron mobility transistors (HEMTs), and addresses the technological problems facing the goal of terahertz operation. As an alternative approach to solve these problems, we developed a plasmon-resonant photomixer for realizing a coherent terahertz continuous-wave source. Preliminary results on electromagnetic response to impulsive photoexcitation at room temperature are reported briefly.",

keywords = "HEMT, Photomixer, Plasmon",

author = "Eiichi Sano and Taiichi Otsuji",

note = "Funding Information: This work was financially supported in part by the Strategic Information and Communications R&D Promotion Programme (SCOPE) from MIC, Japan, and by Grand-in-Aid for Science Research (S) and (B) made available by MEXT, Japan.",

year = "2007",

month = sep,

doi = "10.1142/S0129156407004709",

language = "English",

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T1 - HEMT-based nanometer devices toward terahertz era

AU - Sano, Eiichi

AU - Otsuji, Taiichi

N1 - Funding Information: This work was financially supported in part by the Strategic Information and Communications R&D Promotion Programme (SCOPE) from MIC, Japan, and by Grand-in-Aid for Science Research (S) and (B) made available by MEXT, Japan.

PY - 2007/9

Y1 - 2007/9

N2 - The terahertz region is one of the unexplored bands. This paper first reviews the present status of conventional high-speed devices, especially InP-based high electron mobility transistors (HEMTs), and addresses the technological problems facing the goal of terahertz operation. As an alternative approach to solve these problems, we developed a plasmon-resonant photomixer for realizing a coherent terahertz continuous-wave source. Preliminary results on electromagnetic response to impulsive photoexcitation at room temperature are reported briefly.

AB - The terahertz region is one of the unexplored bands. This paper first reviews the present status of conventional high-speed devices, especially InP-based high electron mobility transistors (HEMTs), and addresses the technological problems facing the goal of terahertz operation. As an alternative approach to solve these problems, we developed a plasmon-resonant photomixer for realizing a coherent terahertz continuous-wave source. Preliminary results on electromagnetic response to impulsive photoexcitation at room temperature are reported briefly.

KW - HEMT

KW - Photomixer

KW - Plasmon

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M3 - Article

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EP - 520

JO - International Journal of High Speed Electronics and Systems

JF - International Journal of High Speed Electronics and Systems

SN - 0129-1564

IS - 3

ER -

HEMT-based nanometer devices toward terahertz era

Abstract

Keywords

ASJC Scopus subject areas

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