Abstract
We have measured the vapor pressure of 4He adsorbed in zeolite templated carbon (ZTC) at 4.2 K, in order to examine 4He film growth in the nanopore. ZTC has a framework made of non-stacked graphene, and has a relatively uniform 1.2 nm pore with three-dimensional (3D) periodicity of 1.4 nm. The nanoporous substrate is a candidate to realize superfluid 4He film with closer 3D connectivity than those studied so far. From the vapor pressure, coverage dependences of the thickness and the two-dimensional (2D) isothermal compressibility of 4He film were derived using thermodynamic equations. The 2D compressibility indicates the onset coverage n 1 of the second adsorption layer around 20 μmol/m 2. It is confirmed that the 4He film in the 1.2 nm pores grows uniformly at least up to 1.3-1.5 n 1.
Original language | English |
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Pages (from-to) | 275-280 |
Number of pages | 6 |
Journal | Journal of Low Temperature Physics |
Volume | 158 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 2010 Jan |
Keywords
- Film growth
- Helium 4
- Nanopore
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics