Helicon-wave-excited-plasma sputtering as an expandable epitaxy method for planar semiconductor thin films

Hiroaki Amaike, Kouji Hazu, Yutaka Sawai, Shigefusa Chichibu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The helicon-wave-excited-plasma sputtering epitaxy (HWPSE) method was exemplified to grow atomically-smooth semiconductor epilayers of good structural and optical qualities. For a case study, ZnO homoepitaxy was carried out. According to the surface damagefree nature, the Zn-polar ZnO epilayers grown above 950 -C exhibited a smooth surface morphology with 0.26-nm-high monolayer atomic steps, of which tilt and twist mosaics were comparable to those of the substrate. Their room temperature photoluminescence (PL) spectrum was dominated by the free-excitonic emission. Clearly split PL peaks originating from A-exciton polaritons and sharp peaks due to the first excited-state excitons were observed at low temperature

Original languageEnglish
Article number105503
JournalApplied Physics Express
Volume2
Issue number10
DOIs
Publication statusPublished - 2009 Oct 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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