Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD

Takayuki Nosaka, Masao Sakuraba, Bernd Tillack, Junichi Murota

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Heavy B atomic-layer doping in Si epitaxial growth on Si(100) by electron-cyclotron-resonance (ECR) Ar plasma enhanced chemical vapor deposition (CVD) has been investigated. By B atomic-layer formation and subsequent Si epitaxial growth on Si(100) without substrate heating, atomic-layer doping is achieved. Most of the incorporated B atom amount of about 7 × 1014 cm- 2 in the B atomic-layer doped Si film is confined within about 2 nm-thick region. For Si cap layer deposition under lower energy plasma condition, the incorporated B atom amount is scarcely changed. On the other hand, in higher energy plasma irradiation condition, it is found that B atoms on Si(100) desorb due to Ar+ ion irradiation. These results demonstrate that lower energy plasma conditions are effective to perform heavy B atomic-layer doping.

Original languageEnglish
Pages (from-to)S140-S142
JournalThin Solid Films
Volume518
Issue number6 SUPPL. 1
DOIs
Publication statusPublished - 2010 Jan 1

Keywords

  • Ar plasma
  • Atomic-layer doping
  • B
  • Chemical vapor deposition (CVD)
  • Electron-cyclotron resonance (ECR)
  • Epitaxial growth
  • Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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