Heavy atomic-layer doping of nitrogen in Si1 - xGex film epitaxially grown on Si(100) by ultraclean low-pressure CVD

Tomoyuki Kawashima, Masao Sakuraba, Bernd Tillack, Junichi Murota

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

N atomic-layer doping in a nanometer-order Si/Si1 - xGex/Si(100) heterostructure using ultraclean low-pressure chemical vapor deposition and its thermal stability at 650 °C were investigated. In the Si0.5Ge0.5 epitaxial layer, it is found that a N doping dose of 6 × 1014 cm- 2 can be confined within an about 1.5 nm-thick region even after 650 °C heat treatment in contrast to the result for Si cap layer growth on the thermally nitrided Si(100) with a N doping dose of 6 × 1014 cm- 2 which was found to be amorphous. Moreover, it is suggested that the confined N atoms in Si1 - xGex preferentially form Si-N bonds and that formation of Si3N4 is enhanced by the heat treatment at 650 °C.

Original languageEnglish
Pages (from-to)S62-S64
JournalThin Solid Films
Volume518
Issue number6 SUPPL. 1
DOIs
Publication statusPublished - 2010 Jan 1

Keywords

  • Atomic-layer doping
  • Chemical vapor deposition (CVD)
  • N
  • SiGe
  • Thermal stability
  • X-ray photoelectron spectroscopy (XPS)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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