Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

Hiroki Tanno, Masao Sakuraba, Bernd Tillack, Junichi Murota

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Electrical characteristics of B atomic-layer doped Si epitaxial films on Si(1 0 0) formed by B atomic-layer formation on Si(1 0 0) at 180 °C and subsequent capping Si deposition at 500 °C using ultraclean low-pressure chemical vapor deposition were investigated. From evaluation results of carrier concentration in the films, by low-temperature SiH 4 exposure at 180-300 °C before the capping Si deposition at 500 °C, 70% improvement of B electrical activity was confirmed, and it is suggested that lowering the temperatures for B atomic-layer formation on Si(1 0 0) as well as SiH 4 exposure before the capping Si deposition is effective to suppress B clustering and to achieve B atomic-layer doped Si films with extremely high carrier concentration.

Original languageEnglish
Pages (from-to)6086-6089
Number of pages4
JournalApplied Surface Science
Volume254
Issue number19
DOIs
Publication statusPublished - 2008 Jul 30

Keywords

  • Atomic-layer doping
  • B
  • B H
  • Chemical Vapor Deposition
  • Epitaxial growth
  • Raman scattering
  • Si
  • SiH
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition'. Together they form a unique fingerprint.

Cite this