Heated ion implantation technology for highly reliable metal-gate/high-k CMOS SOI FinFETs

W. Mizubayashi, H. Onoda, Y. Nakashima, Y. Ishikawa, T. Matsukawa, K. Endo, Y. X. Liu, S. O'Uchi, J. Tsukada, H. Yamauchi, S. Migita, Y. Morita, H. Ota, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and reliability has been thoroughly investigated. It was demonstrated that heated I/I brings perfect crystallization after annealing even in ultrathin Si channel. For the first time, it was found that heated I/I dramatically improves the characteristics such as Ion-Ioff, Vth variability, and bias temperature instability (BTI) for both nMOS and pMOS FinFETs in comparison with conventional room temperature I/I.

Original languageEnglish
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages20.5.1-20.5.4
DOIs
Publication statusPublished - 2013 Dec 1
Externally publishedYes
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: 2013 Dec 92013 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period13/12/913/12/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Mizubayashi, W., Onoda, H., Nakashima, Y., Ishikawa, Y., Matsukawa, T., Endo, K., Liu, Y. X., O'Uchi, S., Tsukada, J., Yamauchi, H., Migita, S., Morita, Y., Ota, H., & Masahara, M. (2013). Heated ion implantation technology for highly reliable metal-gate/high-k CMOS SOI FinFETs. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 20.5.1-20.5.4). [6724670] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724670