Hardware implementation of new analog memory for neural networks

Koji Nakajima, Shigeo Sato, Tomoyasu Kitaura, Junichi Murota, Yasuji Sawada

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We have fabricated a new analog memory with a floating gate as a key component to store synaptic weights for integrated artificial neural networks. The new analog memory comprises a tunnel junction (poly-Si/poly-Si oxide/poly-Si sandwich structure), a thin-film transistor, two capacitors, and a floating gate MOSFET. The diffusion of the charges injected through the tunnel junction is controlled by switching operation of the thin-film transistor, and we refer to the new analog memory as switched diffusion analog memory (SDAM). The obtained characteristics of SDAM are a fast switching speed and an improved linearity between the potential of the floating gate and the number of pulse inputs. SDAM can be used in a neural network in which write/erase and read operations are performed simultaneously.

Original languageEnglish
Pages (from-to)101-105
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE78-C
Issue number1
Publication statusPublished - 1995 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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