We have fabricated a new analog memory with a floating gate as a key component to store synaptic weights for integrated artificial neural networks. The new analog memory comprises a tunnel junction (poly-Si/poly-Si oxide/poly-Si sandwich structure), a thin-film transistor, two capacitors, and a floating gate MOSFET. The diffusion of the charges injected through the tunnel junction is controlled by switching operation of the thin-film transistor, and we refer to the new analog memory as switched diffusion analog memory (SDAM). The obtained characteristics of SDAM are a fast switching speed and an improved linearity between the potential of the floating gate and the number of pulse inputs. SDAM can be used in a neural network in which write/erase and read operations are performed simultaneously.
|Number of pages||5|
|Journal||IEICE Transactions on Electronics|
|Publication status||Published - 1995 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering