Abstract
Current knowledge on macroscopic plasticity indications, i.e., hardness and yield strength, and on microscopic indication, i.e., velocity of individual dislocations, in elemental and IV-IV, III-V, and II-VI compound semiconductors including GaN and ZnSe are reported and discussed on their mutual correlations. The Vickers hardness of the semiconductors can provide conventional information on the material plasticity in a wide temperature range up to their melting points over a wide range of size scales in various material forms. Hardness Hv in diamond- and sphalerite-type semiconductors has a universal relationship on their temperature dependence similar to the yield strength τy with a relation Hv = (70-100) τy in the low temperature region. Yield strength obtained by normal tensile or compression tests are expressed by an experimental equation as a function of the strain rate and temperature. The velocities of various types of dislocations measured directly in several semiconductors are described with an empirical equation as a function of the stress and the temperature. Through the analysis of yield strength data in terms of the collective motion of dislocations during the plastic deformation, the dislocation motion, rate-controlling plastic deformation, are deduced. The activation energy for dislocation motion has a linear relation to the band gap energy, depending on the types of semiconductors, elemental, III-V compounds, and II-VI compounds.
Original language | English |
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Pages (from-to) | 1979-1985 |
Number of pages | 7 |
Journal | Materials Transactions |
Volume | 46 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2005 Sep |
Keywords
- Dislocations
- Hardness
- Semiconductors
- Velocity
- Wide-band-gap
- Yield strength
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering