Hardness of bulk single-crystal GaN and AlN

Ichiro Yonenaga

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The hardness of single-crystal GaN and AlN of 0.5-mm-thickness was measured by the Vickers indentation method in the temperature range 20 - 1400°C. The hardness of GaN and AlN is 10.2 and 17.7 GPa, respectively, at room temperature. The nano-indentation hardness of single-crystal AlN was measured at room temperature as 18 GPa, harder than GaN and InN. Up to about 1100°C, GaN and AlN maintain its hardness similar to that of SiC and thus, a high mechanical stability for GaN and AlN at elevated temperatures is deduced. Yield strength of nitrides is discussed.

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume7
DOIs
Publication statusPublished - 2002 Jan 1

ASJC Scopus subject areas

  • Materials Science(all)

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