TY - JOUR
T1 - Hardness of bulk single-crystal GaN and AlN
AU - Yonenaga, Ichiro
PY - 2002
Y1 - 2002
N2 - The hardness of single-crystal GaN and AlN of 0.5-mm-thickness was measured by the Vickers indentation method in the temperature range 20 - 1400°C. The hardness of GaN and AlN is 10.2 and 17.7 GPa, respectively, at room temperature. The nano-indentation hardness of single-crystal AlN was measured at room temperature as 18 GPa, harder than GaN and InN. Up to about 1100°C, GaN and AlN maintain its hardness similar to that of SiC and thus, a high mechanical stability for GaN and AlN at elevated temperatures is deduced. Yield strength of nitrides is discussed.
AB - The hardness of single-crystal GaN and AlN of 0.5-mm-thickness was measured by the Vickers indentation method in the temperature range 20 - 1400°C. The hardness of GaN and AlN is 10.2 and 17.7 GPa, respectively, at room temperature. The nano-indentation hardness of single-crystal AlN was measured at room temperature as 18 GPa, harder than GaN and InN. Up to about 1100°C, GaN and AlN maintain its hardness similar to that of SiC and thus, a high mechanical stability for GaN and AlN at elevated temperatures is deduced. Yield strength of nitrides is discussed.
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U2 - 10.1557/S1092578300000326
DO - 10.1557/S1092578300000326
M3 - Article
AN - SCOPUS:3042587522
VL - 7
JO - MRS Internet Journal of Nitride Semiconductor Research
JF - MRS Internet Journal of Nitride Semiconductor Research
SN - 1092-5783
ER -