Hardness of bulk single-crystal gallium nitride at high temperatures

Ichiro Yonenaga, Tetsuya Hoshi, Akira Usui

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

The hardness of single-crystal gallium nitride at elevated temperatures is measured and compared with that of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5 N in the temperature range 20-1200°C. The average hardness was measured as 10.8 GPa at room temperature, which is comparable to that of Si. At elevated temperatures, GaN shows higher hardness than Si and GaAs. A high mechanical stability for GaN is deduced.

Original languageEnglish
Pages (from-to)L200-L201
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume39
Issue number3 A/B
DOIs
Publication statusPublished - 2000 Mar 15

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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