TY - JOUR
T1 - Hardness of bulk single-crystal gallium nitride at high temperatures
AU - Yonenaga, Ichiro
AU - Hoshi, Tetsuya
AU - Usui, Akira
PY - 2000/3/15
Y1 - 2000/3/15
N2 - The hardness of single-crystal gallium nitride at elevated temperatures is measured and compared with that of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5 N in the temperature range 20-1200°C. The average hardness was measured as 10.8 GPa at room temperature, which is comparable to that of Si. At elevated temperatures, GaN shows higher hardness than Si and GaAs. A high mechanical stability for GaN is deduced.
AB - The hardness of single-crystal gallium nitride at elevated temperatures is measured and compared with that of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5 N in the temperature range 20-1200°C. The average hardness was measured as 10.8 GPa at room temperature, which is comparable to that of Si. At elevated temperatures, GaN shows higher hardness than Si and GaAs. A high mechanical stability for GaN is deduced.
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U2 - 10.1143/jjap.39.l200
DO - 10.1143/jjap.39.l200
M3 - Article
AN - SCOPUS:0033732944
VL - 39
SP - L200-L201
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 A/B
ER -