Hard x-ray photoemission study of Yb1-xZrxB12: The effects of electron doping on the Kondo insulator YbB12

A. Rousuli, H. Sato, F. Iga, K. Hayashi, K. Ishii, T. Wada, T. Nagasaki, K. Mimura, H. Anzai, K. Ichiki, S. Ueda, A. Kondo, K. Kindo, T. Takabatake, K. Shimada, H. Namatame, M. Taniguchi

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2 Citations (Scopus)


We have carried out hard x-ray photoemission spectroscopy (HAXPES) of Yb1-xZrxB12 (0 ≤ x ≤ 0.875) to study the effects of electron doping on the Kondo insulator YbB12. The Yb valences of Yb1-xZrxB12 at 300 K estimated from the Yb 3d HAXPES spectra decreased after substituting Yb with Zr from 2.93 for YbB12 to 2.83 for Yb0.125Zr0.875B12. A temperature dependent valence decrease was found upon cooling for all doping concentrations. We found peak shifts of the B 1s and Zr 3d5/2, and Yb3+ 4f spectra toward the deeper binding-energy with increasing Zr concentration, which indicates a shift of the Fermi level to the higher energy and that of the Yb 4f hole level close to the Fermi level, respectively, due to electron doping. These results qualitatively show the enhanced hybridization between the Yb 4f and conduction-band states with Zr substitution, consistent with magnetic susceptibility measurements.

Original languageEnglish
Article number265601
JournalJournal of Physics Condensed Matter
Issue number26
Publication statusPublished - 2017 May 26
Externally publishedYes


  • Kondo insulator
  • c-f hybridization
  • hard x-ray photoemission spectroscopy
  • valence fluctuation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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