@article{ae5adcbe376c4fe1acc3dd9e00081eb1,
title = "Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface",
abstract = "We used hard x-ray photoelectron spectroscopy to investigate the interfacial electronic states of a poly(styrenesulfonate) doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) contact on a ZnO single crystal. An understanding of the interfacial band structure is useful for putting the organic contact to practical use. We observed upward band bending of the ZnO layer a few nanometers from the interface. The detected ZnO bulk region exhibited a flat band structure, meaning that the PEDOT:PSS does not greatly deplete the ZnO layer. The band bending caused the charge injection barrier formation with the result that the contact exhibited the Schottky property.",
author = "T. Nagata and S. Oh and Y. Yamashita and H. Yoshikawa and R. Hayakawa and K. Kobayashi and T. Chikyow and Y. Wakayama",
note = "Funding Information: We are grateful to HiSOR, Hiroshima University, and JAEA/SPring-8 for the development of HX-PES at BL15XU in SPring-8. The HX-PES measurements were performed with the approval of the NIMS Beamline Station (Proposal No. 2009B 4601 and 2010A 4604). This work was supported by the Bilateral Joint Project involving Hungary and Japan established by the Japan Society for the Promotion of Science (JSPS). WPI-MANA was established by World Premier International Research Center Initiative (WPI), the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. ",
year = "2012",
month = oct,
day = "22",
doi = "10.1063/1.4762834",
language = "English",
volume = "101",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",
}