Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface

T. Nagata, S. Oh, Y. Yamashita, H. Yoshikawa, R. Hayakawa, K. Kobayashi, T. Chikyow, Y. Wakayama

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Abstract

We used hard x-ray photoelectron spectroscopy to investigate the interfacial electronic states of a poly(styrenesulfonate) doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) contact on a ZnO single crystal. An understanding of the interfacial band structure is useful for putting the organic contact to practical use. We observed upward band bending of the ZnO layer a few nanometers from the interface. The detected ZnO bulk region exhibited a flat band structure, meaning that the PEDOT:PSS does not greatly deplete the ZnO layer. The band bending caused the charge injection barrier formation with the result that the contact exhibited the Schottky property.

Original languageEnglish
Article number173303
JournalApplied Physics Letters
Volume101
Issue number17
DOIs
Publication statusPublished - 2012 Oct 22

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Nagata, T., Oh, S., Yamashita, Y., Yoshikawa, H., Hayakawa, R., Kobayashi, K., Chikyow, T., & Wakayama, Y. (2012). Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface. Applied Physics Letters, 101(17), [173303]. https://doi.org/10.1063/1.4762834