Hard X-ray photoelectron spectroscopic study on high-k dielectrics based resistic random access memory

T. Nagata, Y. Yamashita, H. Yoshikawa, T. Chikyow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Cu ion migration behavior of a Pt/Cu/HfO2/Pt structure, which is a high-k dielectrics based resistive random access memory (ReRAM) and exhibits resistance switching behavior, against the sweep number of pulsed bias voltage was investigated by hard Xray photoelectron spectroscopy (HX-PES). A forward bias application induced the reduction of the unintentionally oxidized Cu top electrode to the Cu ion migration in the HfO2 layer. resulting in the switching from the high resistivity to the low resistivity at approximately ±1.2 V. HX-PES also indicated chat the intensity ratio of Cu 2p3/2 to Hf 3d5/2 core level spectra decreased with increasing the sweep number of pulsed bias voltage. suggesting that Cu moves to the bottom Pt electrode side continuously, which consists with the degradation of switching properties. The Cu ion has a key role in the switching of the Pt/Cu/HfO2/Pt structure.

Original languageEnglish
Title of host publicationNonvolatile Memories 5
EditorsZ. Karim, K. Kobayashi, H. Shima, G. Bersuker, S. Shingubara, Y. Saito, J. G. Park, B. Magyari-Kope, H. Kubota, L. Goux
PublisherElectrochemical Society Inc.
Pages39-47
Number of pages9
Edition32
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes
EventSymposium on Nonvolatile Memories 5 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2016 Oct 22016 Oct 7

Publication series

NameECS Transactions
Number32
Volume75
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Nonvolatile Memories 5 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • Engineering(all)

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