Hard and soft X-ray excited photoelectron spectroscopy study on high-k gate insulators

Hiroshi Nohira, Takeo Hattori

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Hard and soft X-ray photoelectron spectroscopy study on the composition and the chemical structures of transition layers at La2O 3/Si(100), Gd2O3/Si(100), Lu2O 3/Si(100) and La2O3/Y2O 3/Si(100) interfaces and their thermal stabilities are discussed. Soft X-ray photoelectron spectroscopy study on the distribution of nitrogen atomos in nearly 1-nm-thick oxynitride films and the chemical structures of the transition layer at SiO2/Si(100) interface are also discussed.

    Original languageEnglish
    Title of host publication1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
    Pages69-88
    Number of pages20
    DOIs
    Publication statusPublished - 2006 Dec 1
    Event1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006 - Mishima, Shizuoka, Japan
    Duration: 2006 Jan 302006 Feb 1

    Publication series

    Name2006 International Workshop on Nano CMOS - Proceedings, IWNC

    Other

    Other1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
    CountryJapan
    CityMishima, Shizuoka
    Period06/1/3006/2/1

    Keywords

    • Gate Insulator
    • High-k dielectric
    • LaO
    • Photoelectron Spectroscopy

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering

    Fingerprint Dive into the research topics of 'Hard and soft X-ray excited photoelectron spectroscopy study on high-k gate insulators'. Together they form a unique fingerprint.

    Cite this