TY - GEN
T1 - Hard and soft X-ray excited photoelectron spectroscopy study on high-k gate insulators
AU - Nohira, Hiroshi
AU - Hattori, Takeo
PY - 2006
Y1 - 2006
N2 - Hard and soft X-ray photoelectron spectroscopy study on the composition and the chemical structures of transition layers at La2O 3/Si(100), Gd2O3/Si(100), Lu2O 3/Si(100) and La2O3/Y2O 3/Si(100) interfaces and their thermal stabilities are discussed. Soft X-ray photoelectron spectroscopy study on the distribution of nitrogen atomos in nearly 1-nm-thick oxynitride films and the chemical structures of the transition layer at SiO2/Si(100) interface are also discussed.
AB - Hard and soft X-ray photoelectron spectroscopy study on the composition and the chemical structures of transition layers at La2O 3/Si(100), Gd2O3/Si(100), Lu2O 3/Si(100) and La2O3/Y2O 3/Si(100) interfaces and their thermal stabilities are discussed. Soft X-ray photoelectron spectroscopy study on the distribution of nitrogen atomos in nearly 1-nm-thick oxynitride films and the chemical structures of the transition layer at SiO2/Si(100) interface are also discussed.
KW - Gate Insulator
KW - High-k dielectric
KW - LaO
KW - Photoelectron Spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=52149086754&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=52149086754&partnerID=8YFLogxK
U2 - 10.1109/IWNC.2006.4570979
DO - 10.1109/IWNC.2006.4570979
M3 - Conference contribution
AN - SCOPUS:52149086754
SN - 142440603X
SN - 9781424406036
T3 - 2006 International Workshop on Nano CMOS - Proceedings, IWNC
SP - 69
EP - 88
BT - 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
T2 - 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
Y2 - 30 January 2006 through 1 February 2006
ER -