Hard and soft X-ray excited photoelectron spectroscopy study on high-k gate insulators

Hiroshi Nohira; Takeo Hattori

doi:10.1109/IWNC.2006.4570979

Hard and soft X-ray excited photoelectron spectroscopy study on high-k gate insulators

Hiroshi Nohira, Takeo Hattori

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Hard and soft X-ray photoelectron spectroscopy study on the composition and the chemical structures of transition layers at La₂O ₃/Si(100), Gd₂O₃/Si(100), Lu₂O ₃/Si(100) and La₂O₃/Y₂O ₃/Si(100) interfaces and their thermal stabilities are discussed. Soft X-ray photoelectron spectroscopy study on the distribution of nitrogen atomos in nearly 1-nm-thick oxynitride films and the chemical structures of the transition layer at SiO₂/Si(100) interface are also discussed.

Original language	English
Title of host publication	1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
Pages	69-88
Number of pages	20
DOIs	https://doi.org/10.1109/IWNC.2006.4570979
Publication status	Published - 2006
Externally published	Yes
Event	1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006 - Mishima, Shizuoka, Japan Duration: 2006 Jan 30 → 2006 Feb 1

Publication series

Name	2006 International Workshop on Nano CMOS - Proceedings, IWNC

Other

Other	1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
Country/Territory	Japan
City	Mishima, Shizuoka
Period	06/1/30 → 06/2/1

Keywords

Gate Insulator
High-k dielectric
LaO
Photoelectron Spectroscopy

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IWNC.2006.4570979

Cite this

Nohira, H & Hattori, T 2006, Hard and soft X-ray excited photoelectron spectroscopy study on high-k gate insulators. in 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006., 4570979, 2006 International Workshop on Nano CMOS - Proceedings, IWNC, pp. 69-88, 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006, Mishima, Shizuoka, Japan, 06/1/30. https://doi.org/10.1109/IWNC.2006.4570979

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title = "Hard and soft X-ray excited photoelectron spectroscopy study on high-k gate insulators",

abstract = "Hard and soft X-ray photoelectron spectroscopy study on the composition and the chemical structures of transition layers at La2O 3/Si(100), Gd2O3/Si(100), Lu2O 3/Si(100) and La2O3/Y2O 3/Si(100) interfaces and their thermal stabilities are discussed. Soft X-ray photoelectron spectroscopy study on the distribution of nitrogen atomos in nearly 1-nm-thick oxynitride films and the chemical structures of the transition layer at SiO2/Si(100) interface are also discussed.",

keywords = "Gate Insulator, High-k dielectric, LaO, Photoelectron Spectroscopy",

author = "Hiroshi Nohira and Takeo Hattori",

year = "2006",

doi = "10.1109/IWNC.2006.4570979",

language = "English",

isbn = "142440603X",

series = "2006 International Workshop on Nano CMOS - Proceedings, IWNC",

pages = "69--88",

booktitle = "1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006",

note = "1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006 ; Conference date: 30-01-2006 Through 01-02-2006",

}

TY - GEN

T1 - Hard and soft X-ray excited photoelectron spectroscopy study on high-k gate insulators

AU - Nohira, Hiroshi

AU - Hattori, Takeo

PY - 2006

Y1 - 2006

N2 - Hard and soft X-ray photoelectron spectroscopy study on the composition and the chemical structures of transition layers at La2O 3/Si(100), Gd2O3/Si(100), Lu2O 3/Si(100) and La2O3/Y2O 3/Si(100) interfaces and their thermal stabilities are discussed. Soft X-ray photoelectron spectroscopy study on the distribution of nitrogen atomos in nearly 1-nm-thick oxynitride films and the chemical structures of the transition layer at SiO2/Si(100) interface are also discussed.

AB - Hard and soft X-ray photoelectron spectroscopy study on the composition and the chemical structures of transition layers at La2O 3/Si(100), Gd2O3/Si(100), Lu2O 3/Si(100) and La2O3/Y2O 3/Si(100) interfaces and their thermal stabilities are discussed. Soft X-ray photoelectron spectroscopy study on the distribution of nitrogen atomos in nearly 1-nm-thick oxynitride films and the chemical structures of the transition layer at SiO2/Si(100) interface are also discussed.

KW - Gate Insulator

KW - High-k dielectric

KW - LaO

KW - Photoelectron Spectroscopy

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DO - 10.1109/IWNC.2006.4570979

M3 - Conference contribution

AN - SCOPUS:52149086754

SN - 142440603X

SN - 9781424406036

T3 - 2006 International Workshop on Nano CMOS - Proceedings, IWNC

SP - 69

EP - 88

BT - 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006

T2 - 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006

Y2 - 30 January 2006 through 1 February 2006

ER -

Hard and soft X-ray excited photoelectron spectroscopy study on high-k gate insulators

Abstract

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Other

Keywords

ASJC Scopus subject areas

Access to Document

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