Hard and soft X-ray excited photoelectron spectroscopy study on high-k gate insulators

Hiroshi Nohira, Takeo Hattori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Hard and soft X-ray photoelectron spectroscopy study on the composition and the chemical structures of transition layers at La2O 3/Si(100), Gd2O3/Si(100), Lu2O 3/Si(100) and La2O3/Y2O 3/Si(100) interfaces and their thermal stabilities are discussed. Soft X-ray photoelectron spectroscopy study on the distribution of nitrogen atomos in nearly 1-nm-thick oxynitride films and the chemical structures of the transition layer at SiO2/Si(100) interface are also discussed.

Original languageEnglish
Title of host publication1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
Pages69-88
Number of pages20
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006 - Mishima, Shizuoka, Japan
Duration: 2006 Jan 302006 Feb 1

Publication series

Name2006 International Workshop on Nano CMOS - Proceedings, IWNC

Other

Other1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
Country/TerritoryJapan
CityMishima, Shizuoka
Period06/1/3006/2/1

Keywords

  • Gate Insulator
  • High-k dielectric
  • LaO
  • Photoelectron Spectroscopy

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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