Hall effect of solution-crystallized and vapor-deposited 2,7-dioctylbenzothieno[3,2-b]benzothiophene field-effect transistors

M. Yamagishi, T. Uemura, Y. Takatsuki, J. Soeda, Y. Okada, Y. Hirose, Y. Nakazawa, S. Shinamura, Kazuo Takimiya, J. Takeya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Gate-voltage dependent Hall coefficient RH is measured in high-mobility field-effect transistors of solution-crystallized and vapor-deposited 2,7-dioctylbenzomieno[3,2-b]benzothiophene. The value of R H evolves with density of accumulated charge Q, precisely satisfying the free-electron formula RH = 1/ Q near room temperature. The result indicates that the intrinsic charge transport inside the grains is band-like in me high-mobility organic-semiconductor thin films that are of significant interest in industry. At lower temperatures, even Hall-effect mobility averaged over the whole polycrystalline film decreases due to the presence of carrier-trapping levels at me grain boundaries, while me free-electron-like transport is preserved in me grains. With the separated description of me inter- and intra-grain charge transport, it is demonstrated that the reduction of mobility with decreasing temperature often shown in organic thin-film transistors does not necessarily mean mere hopping transport.

Original languageEnglish
Title of host publicationOrganic Photovoltaics and Related Electronics - From Excitons to Devices
Pages119-125
Number of pages7
Volume1270
Publication statusPublished - 2010 Dec 1
Externally publishedYes
Event2010 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2010 Apr 52010 Apr 9

Other

Other2010 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period10/4/510/4/9

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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