Hall effect of FeTe and Fe(Se1-xTex) thin films

I. Tsukada, M. Hanawa, Seiki Komiya, A. Ichinose, T. Akiike, Y. Imai, A. Maeda

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

The Hall effect is investigated in thin-film samples of iron-chalcogenide superconductors in detail. The Hall coefficient (RH) of FeTe and Fe(Se1-xTex) exhibits a similar positive value around 300 K, indicating that the high-temperature normal state is dominated by hole-channel transport. FeTe exhibits a sign reversal from positive to negative across the transition to the low-temperature antiferromagnetic state, indicating the occurrence of drastic reconstruction in the band structure. The mobility analysis using the carrier density theoretically calculated reveals that the mobility of holes is strongly suppressed to zero, and hence the electric transport looks to be dominated by electrons. The Se substitution to Te suppresses the antiferromagnetic long-range order and induces superconductivity instead. The similar mobility analysis for Fe(Se0.4Te0.6) and Fe(Se0.5Te0.5) thin films shows that the mobility of electrons increases with decreasing temperature even in the paramagnetic state, and keeps sufficiently high values down to the superconducting transition temperature. From the comparison between FeTe and Fe(Se1- xTex), it is suggested that the coexistence of 'itinerant' carriers both in electron and hole channels is indispensable for the occurrence of superconductivity.

Original languageEnglish
Pages (from-to)625-629
Number of pages5
JournalPhysica C: Superconductivity and its applications
Volume471
Issue number21-22
DOIs
Publication statusPublished - 2011 Nov
Externally publishedYes

Keywords

  • FeTe
  • Hall effect
  • Iron chalcogenide superconductor
  • Two-band model

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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