Hall effect measurements on SixGe1-x bulk alloys

T. Mchedlidze, I. Yonenaga

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Carrier transport measurement results for SixGe1-x bulk alloys with 0.03≤x≤0.9, grown by the Czochralski method are presented. Both monocrystalline (x=0.03 and x=0.23) and polycrystalline (x=0.12, 0.25, 0.4, 0.5, 0.75, 0.9) samples were analyzed. In all samples additional charge carriers were created during growth or/and cooling of crystals. With n-type starting materials only alloy with x=0.9 revealed n-type conductivity, all other alloys were of p-type. Creation of acceptors in the SixGe1-x alloy grown by Czochralski method is maximal for 0.4≤x≤0.75.

Original languageEnglish
Pages (from-to)381-384
Number of pages4
JournalMaterials Research Society Symposium - Proceedings
Volume442
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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