Hall effect measurement of InAsN alloy films grown directly on GaAs(001) substrates by RF-MBE

M. Kuroda, Ryuji Katayama, S. Nishio, K. Onabe, Y. Shiraki

Research output: Contribution to journalConference articlepeer-review

25 Citations (Scopus)

Abstract

Due to the huge bandgap-bowing, a red shift of the band gap energy with increasing nitrogen content is expected for the InAsN alloy. However, a blue shift of the fundamental absorption edge has been observed in a recent study. This result seems to be significantly affected by the Burstein-Moss effect because the InAsN alloy has a large carrier concentration. The Burstein-Moss effect should be ruled out in order to characterize the real band gap energy. In this paper, Hall effect measurements were performed to estimate the carrier concentration of the InAsN alloy films and the Burstein-Moss shift energy was evaluated. Excluding the Burstein-Moss shift energy, a red shift of the real band-gap energy with increasing nitrogen content was observed.

Original languageEnglish
Pages (from-to)2765-2768
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - 2003 Dec 1
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

ASJC Scopus subject areas

  • Condensed Matter Physics

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