Hall effect in macroscopic ballistic four-terminal square structures

Y. Hirayama, S. Tarucha, T. Saku, Y. Horikoshi

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The Hall effect is studied for 1030-m size ballistic four-terminal square structures fabricated on an AlxGa1-xAs-GaAs high-mobility modulation-doped wafer. On this scale, four-terminal square structures with sharp aperture corners are possible. The Hall resistance is not quenched and is larger than the classical linear value in a low magnetic field. It has periodic peaks corresponding to electron focusing when the terminals are narrow, and a broadening of these peaks makes a plateaulike structure when the terminals are wide.

Original languageEnglish
Pages (from-to)3440-3443
Number of pages4
JournalPhysical Review B
Issue number7
Publication statusPublished - 1991
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics


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