The Hall effect is studied for 1030-m size ballistic four-terminal square structures fabricated on an AlxGa1-xAs-GaAs high-mobility modulation-doped wafer. On this scale, four-terminal square structures with sharp aperture corners are possible. The Hall resistance is not quenched and is larger than the classical linear value in a low magnetic field. It has periodic peaks corresponding to electron focusing when the terminals are narrow, and a broadening of these peaks makes a plateaulike structure when the terminals are wide.
ASJC Scopus subject areas
- Condensed Matter Physics