Hall effect in anisotropic SixGe1-x polycrystals

Teimouraz R. Mchedlidze, Ichiro Yonenaga

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We studied carrier transport in SixGe1-x polycrystalline bulk alloys grown by the Czochralski method. The grains in the alloys are elongated in the growth direction due to the supercooling effect. At a high concentration of grains, the anisotropy of their shape leads to an observable anisotropy in the electrical properties of the alloys. The "two-phase geometrical model" was applied to estimate the transport properties of the grains and grain boundary materials from the Hall effect measurements in different directions of the alloys. The results show that in the SiGe polycrystalline alloy, conductive grains are surrounded by high-resistivity barriers. The height of the barriers was calculated to be 0.38 eV and "electrical" thickness 3 × 10-5 cm.

Original languageEnglish
Pages (from-to)652-655
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number2 PART A
DOIs
Publication statusPublished - 1996 Feb

Keywords

  • Carrier transport
  • Hall effect
  • Polycrystals
  • SiGe

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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