Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAlMgO4 heterointerface

Takao I. Suzuki, Akira Ohtomo, Atsushi Tsukazaki, Futami Sato, Jyunya Nishii, Hideo Ohno, Masashi Kawasaki

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

The field-effect transfer characteristics and Hall-effect properties of lattice-matched ZnO/SCAM heterointerfaces were investigated. It was found that the carrier density obtained from Hall-effect measurements increased linearly with increasing VG. The conductance mobility was converging with the Hall mobility, indicating that the heterointerfaces were of high quality. It was concluded that the electronic activity of the grain boundary significantly affects the performance of ZnO-based field effect devices.

Original languageEnglish
Pages (from-to)1887-1890
Number of pages4
JournalAdvanced Materials
Volume16
Issue number21
DOIs
Publication statusPublished - 2004 Nov 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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