Halide vapor phase epitaxy of thick GaN films on ScAlMgO4 substrates and their self-separation for fabricating freestanding wafers

Kazuki Ohnishi, Masaya Kanoh, Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Mukai, Takashi Matsuoka

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Halide vapor phase epitaxy of thick GaN films was demonstrated on ScAlMgO4 (SCAM) substrates, and their self-separation was achieved. The 320-μm-thick GaN film was self-separated from the SCAM substrate during the cooling process after the growth. This separation phenomenon occurred because of both the c-plane cleavability of SCAM and the difference in the thermal-expansion coefficients between GaN and SCAM. The dark-spot densities for the GaN films on the SCAM substrates were approximately 30% lower than those on sapphire substrates. These results indicate that SCAM substrates are promising for fabricating a high-quality freestanding GaN wafer at a low cost.

Original languageEnglish
Article number101001
JournalApplied Physics Express
Volume10
Issue number10
DOIs
Publication statusPublished - 2017 Oct

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Halide vapor phase epitaxy of thick GaN films on ScAlMgO<sub>4</sub> substrates and their self-separation for fabricating freestanding wafers'. Together they form a unique fingerprint.

Cite this