Half-Metallic Fe3O4 Films for High-Sensitivity Magnetoresistive Devices

H. Takahashi, S. Soeya, J. Hayakawa, K. Ito, A. Kida, H. Asano, M. Matsui

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

By RF sputtering on a MgO (100) substrate, we have made Fe 3O4 (111) metal and Fe3O4 (001)/TiN (001) films that have Verwey temperature (TV) near 120 K. The saturation magnetizations and resistivities of those Fe3O4 films were comparable to those of bulk Fe3O4, and the magnetoresistive (MR) ratio and MR ratio area product AΔR measured for various materials structures of current perpendicular to plane (CPP) samples using Fe3O4 (111) increased sharply at 120 K. This increase around TV seemed to be related to the change in the Fe 3O4 crystal. The AΔR and MR of CPP-GMR samples using Fe3O4 (001), on the other hand, such as Ni 80Fe20/TiN/Fe3O4 (001)/TiN (001), Co75Fe25/TiN/Fe3O4 (001)/TiN (001), and Fe3O4/TiN/Fe3O4 (001)/TiN (001), were 2-4 times larger than those of CPP-GMR samples using Fe3O 4 (111) were. And for Fe3O4 (001) the increase of MR at TV was smaller than it was for Fe3O4 (111).

Original languageEnglish
Pages (from-to)313-318
Number of pages6
JournalIEEE Transactions on Magnetics
Volume40
Issue number1 II
DOIs
Publication statusPublished - 2004 Jan

Keywords

  • Current perpendicular to plane
  • FeO
  • Magnetoresistive effect
  • TiN
  • Verway temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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