Half-Metallic Fe3O4 Films for High-Sensitivity Magnetoresistive Devices

H. Takahashi; S. Soeya; J. Hayakawa; K. Ito; A. Kida; H. Asano; M. Matsui

doi:10.1109/TMAG.2003.821164

Half-Metallic Fe₃O₄ Films for High-Sensitivity Magnetoresistive Devices

H. Takahashi, S. Soeya, J. Hayakawa, K. Ito, A. Kida, H. Asano, M. Matsui

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

By RF sputtering on a MgO (100) substrate, we have made Fe ₃O₄ (111) metal and Fe₃O₄ (001)/TiN (001) films that have Verwey temperature (TV) near 120 K. The saturation magnetizations and resistivities of those Fe₃O₄ films were comparable to those of bulk Fe₃O₄, and the magnetoresistive (MR) ratio and MR ratio area product AΔR measured for various materials structures of current perpendicular to plane (CPP) samples using Fe₃O₄ (111) increased sharply at 120 K. This increase around T_V seemed to be related to the change in the Fe ₃O₄ crystal. The AΔR and MR of CPP-GMR samples using Fe₃O₄ (001), on the other hand, such as Ni ₈₀Fe₂₀/TiN/Fe₃O₄ (001)/TiN (001), Co₇₅Fe₂₅/TiN/Fe₃O₄ (001)/TiN (001), and Fe₃O₄/TiN/Fe₃O₄ (001)/TiN (001), were 2-4 times larger than those of CPP-GMR samples using Fe₃O ₄ (111) were. And for Fe₃O₄ (001) the increase of MR at T_V was smaller than it was for Fe₃O₄ (111).

Original language	English
Pages (from-to)	313-318
Number of pages	6
Journal	IEEE Transactions on Magnetics
Volume	40
Issue number	1 II
DOIs	https://doi.org/10.1109/TMAG.2003.821164
Publication status	Published - 2004 Jan

Keywords

Current perpendicular to plane
FeO
Magnetoresistive effect
TiN
Verway temperature

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2003.821164

Fingerprint Dive into the research topics of 'Half-Metallic Fe<sub>3</sub>O<sub>4</sub> Films for High-Sensitivity Magnetoresistive Devices'. Together they form a unique fingerprint.

Cite this

@article{216ccf6535444c61b7763ef24c2e41dc,

title = "Half-Metallic Fe3O4 Films for High-Sensitivity Magnetoresistive Devices",

abstract = "By RF sputtering on a MgO (100) substrate, we have made Fe 3O4 (111) metal and Fe3O4 (001)/TiN (001) films that have Verwey temperature (TV) near 120 K. The saturation magnetizations and resistivities of those Fe3O4 films were comparable to those of bulk Fe3O4, and the magnetoresistive (MR) ratio and MR ratio area product AΔR measured for various materials structures of current perpendicular to plane (CPP) samples using Fe3O4 (111) increased sharply at 120 K. This increase around TV seemed to be related to the change in the Fe 3O4 crystal. The AΔR and MR of CPP-GMR samples using Fe3O4 (001), on the other hand, such as Ni 80Fe20/TiN/Fe3O4 (001)/TiN (001), Co75Fe25/TiN/Fe3O4 (001)/TiN (001), and Fe3O4/TiN/Fe3O4 (001)/TiN (001), were 2-4 times larger than those of CPP-GMR samples using Fe3O 4 (111) were. And for Fe3O4 (001) the increase of MR at TV was smaller than it was for Fe3O4 (111).",

keywords = "Current perpendicular to plane, FeO, Magnetoresistive effect, TiN, Verway temperature",

author = "H. Takahashi and S. Soeya and J. Hayakawa and K. Ito and A. Kida and H. Asano and M. Matsui",

note = "Funding Information: Manuscript received July 1, 2003. This work was supported in part by the IT-program of RR2002 from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) in Japan. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2004",

month = jan,

doi = "10.1109/TMAG.2003.821164",

language = "English",

volume = "40",

pages = "313--318",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1 II",

}

TY - JOUR

T1 - Half-Metallic Fe3O4 Films for High-Sensitivity Magnetoresistive Devices

AU - Takahashi, H.

AU - Soeya, S.

AU - Hayakawa, J.

AU - Ito, K.

AU - Kida, A.

AU - Asano, H.

AU - Matsui, M.

N1 - Funding Information: Manuscript received July 1, 2003. This work was supported in part by the IT-program of RR2002 from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) in Japan. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2004/1

Y1 - 2004/1

N2 - By RF sputtering on a MgO (100) substrate, we have made Fe 3O4 (111) metal and Fe3O4 (001)/TiN (001) films that have Verwey temperature (TV) near 120 K. The saturation magnetizations and resistivities of those Fe3O4 films were comparable to those of bulk Fe3O4, and the magnetoresistive (MR) ratio and MR ratio area product AΔR measured for various materials structures of current perpendicular to plane (CPP) samples using Fe3O4 (111) increased sharply at 120 K. This increase around TV seemed to be related to the change in the Fe 3O4 crystal. The AΔR and MR of CPP-GMR samples using Fe3O4 (001), on the other hand, such as Ni 80Fe20/TiN/Fe3O4 (001)/TiN (001), Co75Fe25/TiN/Fe3O4 (001)/TiN (001), and Fe3O4/TiN/Fe3O4 (001)/TiN (001), were 2-4 times larger than those of CPP-GMR samples using Fe3O 4 (111) were. And for Fe3O4 (001) the increase of MR at TV was smaller than it was for Fe3O4 (111).

AB - By RF sputtering on a MgO (100) substrate, we have made Fe 3O4 (111) metal and Fe3O4 (001)/TiN (001) films that have Verwey temperature (TV) near 120 K. The saturation magnetizations and resistivities of those Fe3O4 films were comparable to those of bulk Fe3O4, and the magnetoresistive (MR) ratio and MR ratio area product AΔR measured for various materials structures of current perpendicular to plane (CPP) samples using Fe3O4 (111) increased sharply at 120 K. This increase around TV seemed to be related to the change in the Fe 3O4 crystal. The AΔR and MR of CPP-GMR samples using Fe3O4 (001), on the other hand, such as Ni 80Fe20/TiN/Fe3O4 (001)/TiN (001), Co75Fe25/TiN/Fe3O4 (001)/TiN (001), and Fe3O4/TiN/Fe3O4 (001)/TiN (001), were 2-4 times larger than those of CPP-GMR samples using Fe3O 4 (111) were. And for Fe3O4 (001) the increase of MR at TV was smaller than it was for Fe3O4 (111).

KW - Current perpendicular to plane

KW - FeO

KW - Magnetoresistive effect

KW - TiN

KW - Verway temperature

UR - http://www.scopus.com/inward/record.url?scp=1342286870&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1342286870&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2003.821164

DO - 10.1109/TMAG.2003.821164

M3 - Article

AN - SCOPUS:1342286870

VL - 40

SP - 313

EP - 318

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 1 II

ER -