Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes

W. Mizubayashi, K. Fukuda, T. Mori, K. Endo, Y. X. Liu, T. Matsukawa, S. O'uchi, Y. Ishikawa, S. Migita, Y. Morita, A. Tanabe, J. Tsukada, H. Yamauchi, M. Masahara, H. Ota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report guidelines for symmetric threshold voltage (Vth) in double gate (DG) tunnel FinFETs (tFinFETs) with single and dual metal gate electrodes. To realize the symmetric Vth=±0.2V, the work function difference (ΔΦm) of each gate electrode in n- and p-type tFinFETs with a nondoped Si channel must be 1.34 eV, indicating that tuning the effective work functions in the dual metal gates is difficult. By adding Ge in the channel, the work function required in Ge-channel p-tFinFETs can be reduced to 4.46 eV, furthermore, ΔΦm required to realize a symmetric Vth in n- and p-type tFinFETs can be as small as the minimum value of 0.28 e V. This result means that a symmetric Vth is realized in realistic dual metal gate materials by adding Ge. By using our independent DG tFinFETs with a novel source profile, a symmetric Vth can be realized in a single metal gate in a Ge channel.

Original languageEnglish
Title of host publicationESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages202-205
Number of pages4
ISBN (Print)9781479906499
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event43rd European Solid-State Device Research Conference, ESSDERC 2013 - Bucharest, Romania
Duration: 2013 Sep 162013 Sep 20

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference43rd European Solid-State Device Research Conference, ESSDERC 2013
CountryRomania
CityBucharest
Period13/9/1613/9/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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