Growth temperature and oxygen ambient dependency of SrTiO3/Si(100) interface structures

Parhat Ahmet, Takashi Koida, Mamoru Yoshimoto, Hideomi Koinuma, Toyohiro Chikyo

Research output: Contribution to journalConference articlepeer-review

Abstract

A systematical growth temperature and oxygen ambient dependency of SrTiO3/Si interface structures were investigated using a growth temperature gradient pulse laser deposition (PLD) system and cross sectional high resolution transmission electron microscopy (HRTEM). A SiO2 interfacial layer and an amorphized SrTiO3 layer were observed at the interface for the thin films grown on Si (100) at growth temperatures above 600°C. Our results show that at growth temperatures higher than 600°C, the formation of the amorphized SrTiO3 layer is strongly growth temperature and also oxygen partial pressure dependent.

Original languageEnglish
Pages (from-to)97-102
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume700
Publication statusPublished - 2002 Jan 1
Externally publishedYes
EventCombinatorial and Artificial Intelligence Methods in Materials Science - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 29

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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