Growth temperature and oxygen ambient dependency of SrTiO3/Si(100) interface structures

Parhat Ahmet; Takashi Koida; Mamoru Yoshimoto; Hideomi Koinuma; Toyohiro Chikyo

Growth temperature and oxygen ambient dependency of SrTiO₃/Si(100) interface structures

Parhat Ahmet, Takashi Koida, Mamoru Yoshimoto, Hideomi Koinuma, Toyohiro Chikyo

Research output: Contribution to journal › Conference article › peer-review

Abstract

A systematical growth temperature and oxygen ambient dependency of SrTiO₃/Si interface structures were investigated using a growth temperature gradient pulse laser deposition (PLD) system and cross sectional high resolution transmission electron microscopy (HRTEM). A SiO₂ interfacial layer and an amorphized SrTiO₃ layer were observed at the interface for the thin films grown on Si (100) at growth temperatures above 600°C. Our results show that at growth temperatures higher than 600°C, the formation of the amorphized SrTiO₃ layer is strongly growth temperature and also oxygen partial pressure dependent.

Original language	English
Pages (from-to)	97-102
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	700
Publication status	Published - 2002 Jan 1
Externally published	Yes
Event	Combinatorial and Artificial Intelligence Methods in Materials Science - Boston, MA, United States Duration: 2001 Nov 26 → 2001 Nov 29

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Growth temperature and oxygen ambient dependency of SrTiO3/Si(100) interface structures",

abstract = "A systematical growth temperature and oxygen ambient dependency of SrTiO3/Si interface structures were investigated using a growth temperature gradient pulse laser deposition (PLD) system and cross sectional high resolution transmission electron microscopy (HRTEM). A SiO2 interfacial layer and an amorphized SrTiO3 layer were observed at the interface for the thin films grown on Si (100) at growth temperatures above 600°C. Our results show that at growth temperatures higher than 600°C, the formation of the amorphized SrTiO3 layer is strongly growth temperature and also oxygen partial pressure dependent.",

author = "Parhat Ahmet and Takashi Koida and Mamoru Yoshimoto and Hideomi Koinuma and Toyohiro Chikyo",

year = "2002",

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volume = "700",

pages = "97--102",

journal = "Materials Research Society Symposium - Proceedings",

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TY - JOUR

T1 - Growth temperature and oxygen ambient dependency of SrTiO3/Si(100) interface structures

AU - Ahmet, Parhat

AU - Koida, Takashi

AU - Yoshimoto, Mamoru

AU - Koinuma, Hideomi

AU - Chikyo, Toyohiro

PY - 2002/1/1

Y1 - 2002/1/1

N2 - A systematical growth temperature and oxygen ambient dependency of SrTiO3/Si interface structures were investigated using a growth temperature gradient pulse laser deposition (PLD) system and cross sectional high resolution transmission electron microscopy (HRTEM). A SiO2 interfacial layer and an amorphized SrTiO3 layer were observed at the interface for the thin films grown on Si (100) at growth temperatures above 600°C. Our results show that at growth temperatures higher than 600°C, the formation of the amorphized SrTiO3 layer is strongly growth temperature and also oxygen partial pressure dependent.

AB - A systematical growth temperature and oxygen ambient dependency of SrTiO3/Si interface structures were investigated using a growth temperature gradient pulse laser deposition (PLD) system and cross sectional high resolution transmission electron microscopy (HRTEM). A SiO2 interfacial layer and an amorphized SrTiO3 layer were observed at the interface for the thin films grown on Si (100) at growth temperatures above 600°C. Our results show that at growth temperatures higher than 600°C, the formation of the amorphized SrTiO3 layer is strongly growth temperature and also oxygen partial pressure dependent.

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M3 - Conference article

AN - SCOPUS:0036051125

SN - 0272-9172

VL - 700

SP - 97

EP - 102

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Combinatorial and Artificial Intelligence Methods in Materials Science

Y2 - 26 November 2001 through 29 November 2001

ER -

Growth temperature and oxygen ambient dependency of SrTiO₃/Si(100) interface structures

Abstract

ASJC Scopus subject areas

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