Growth rate of silicon nanowires

J. Kikkawa; Y. Ohno; S. Takeda

doi:10.1063/1.1888034

Growth rate of silicon nanowires

J. Kikkawa, Y. Ohno, S. Takeda

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123 Citations (Scopus)

Abstract

We have measured the growth rate of silicon nanowires (SiNWs), which were grown at temperatures between 365 and 495 °C via the vapor-liquid-solid (VLS) mechanism. We grew SiNWs using gold as catalysts and monosilane (SiH4) as a vapor phase reactant. Observing SiNWs by means of transmission electron microscopy, we have found that SiNWs with smaller diameters grow slower than those with larger ones, and the critical diameter at which growth stops completely exists. We have estimated the critical diameter of SiNWs to be about 2 nm. We have also measured the temperature dependence of the growth rate of SiNWs and estimated the activation energy of the growth of SiNWs to be 230 kJmol.

Original language	English
Article number	123109
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	12
DOIs	https://doi.org/10.1063/1.1888034
Publication status	Published - 2005 Mar 21
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We have measured the growth rate of silicon nanowires (SiNWs), which were grown at temperatures between 365 and 495 °C via the vapor-liquid-solid (VLS) mechanism. We grew SiNWs using gold as catalysts and monosilane (SiH4) as a vapor phase reactant. Observing SiNWs by means of transmission electron microscopy, we have found that SiNWs with smaller diameters grow slower than those with larger ones, and the critical diameter at which growth stops completely exists. We have estimated the critical diameter of SiNWs to be about 2 nm. We have also measured the temperature dependence of the growth rate of SiNWs and estimated the activation energy of the growth of SiNWs to be 230 kJmol.",

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