Growth rate of silicon nanowires

J. Kikkawa, Y. Ohno, S. Takeda

Research output: Contribution to journalArticlepeer-review

123 Citations (Scopus)

Abstract

We have measured the growth rate of silicon nanowires (SiNWs), which were grown at temperatures between 365 and 495 °C via the vapor-liquid-solid (VLS) mechanism. We grew SiNWs using gold as catalysts and monosilane (SiH4) as a vapor phase reactant. Observing SiNWs by means of transmission electron microscopy, we have found that SiNWs with smaller diameters grow slower than those with larger ones, and the critical diameter at which growth stops completely exists. We have estimated the critical diameter of SiNWs to be about 2 nm. We have also measured the temperature dependence of the growth rate of SiNWs and estimated the activation energy of the growth of SiNWs to be 230 kJmol.

Original languageEnglish
Article number123109
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number12
DOIs
Publication statusPublished - 2005 Mar 21
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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