Growth rate anomaly in ultralow-pressure chemical vapor deposition of 3C-SiC on Si(001) using monomethylsilane

Eiji Saito, Sergey N. Filimonov, Maki Suemitsu

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Temperature dependence of the growth rate of 3C-SiC films on Si(001) during ultralow-pressure chemical vapor deposition (ULP-CVD) using monomethylsilane is reported. At low temperatures the growth rate is high and thermally activated, but a drastic drop of the growth rate occurs at a critical temperature T c. Another characteristic temperature T (≤ Tc) separates single-crystalline and polycrystalline SiC(001)/Si growth. With a two-step growth procedure, consisting of a high temperature nucleation of a seeding 3C-SiC(001) layer followed by a low-temperature deposition, we have realized a high-rate (̃3 μm/h) growth of a single-crystalline 3C-SiC(001) film.

Original languageEnglish
Article number010203
JournalJapanese journal of applied physics
Volume50
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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