Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions

Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Kuniharu Fujii, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

The growth rate and surface morphology of 4H-SiC crystals prepared by solution growth with Si1-xCrxand Si1-x-yCrxAly(x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H-SiC crystals was suppressed using Si1-x-yCrxAlysolvents even under highly supersaturated conditions where the growth rate exceeded 760 μm/h. Conversely, trench-like defects were observed in crystals grown with Si1-xCrxsolvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1-x-yCrxAlysolvents was maintained at lower levels than that obtained using Si1-xCrxsolvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects.

Original languageEnglish
Pages (from-to)681-685
Number of pages5
JournalJournal of Crystal Growth
Volume401
DOIs
Publication statusPublished - 2014 Sep 1

Keywords

  • A1. Roughening
  • A1. Surface structure
  • A2. Growth from solution
  • A2. Top seeded solution growth
  • B1. Silicon carbide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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