Growth Optimization of Multi-Layer Graphene for Thermal-TSV Application in 3D-LSI

Murugesan Mariappan, Mitsumasa Koyanagi, Takafumi Fukushima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A feasibility study for the continuous formation of multi-layer graphene (MLG) on both through-Si-via (TSV) top surface and all through the TSV sidewall and the bottom surface of high-Aspect-ratio TSV by thermal chemical vapor deposition (CVD) technique has been carried out. Both microstructural and μ-Raman studies on cross-sectional graphene-TSV samples confirmed that the continuous formation of MLG all along the TSV side wall for the CVD growth temperatures of 650°C and above, and it may be used as thermal TSVs for heat removal in the stacked tiers of 3D-LSI/IC.

Original languageEnglish
Title of host publicationIEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728148700
DOIs
Publication statusPublished - 2019 Oct
Event2019 IEEE International 3D Systems Integration Conference, 3DIC 2019 - Sendai, Japan
Duration: 2019 Oct 82019 Oct 10

Publication series

NameIEEE 2019 International 3D Systems Integration Conference, 3DIC 2019

Conference

Conference2019 IEEE International 3D Systems Integration Conference, 3DIC 2019
CountryJapan
CitySendai
Period19/10/819/10/10

Keywords

  • Electroless Ni
  • Graphene-TSV
  • μ-Raman spectra

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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