Growth Optimization of Multi-Layer Graphene for Thermal-TSV Application in 3D-LSI

Murugesan Mariappan; Mitsumasa Koyanagi; Takafumi Fukushima

doi:10.1109/3DIC48104.2019.9058853

Growth Optimization of Multi-Layer Graphene for Thermal-TSV Application in 3D-LSI

Murugesan Mariappan, Mitsumasa Koyanagi, Takafumi Fukushima

ENG - Mechanical Systems Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A feasibility study for the continuous formation of multi-layer graphene (MLG) on both through-Si-via (TSV) top surface and all through the TSV sidewall and the bottom surface of high-Aspect-ratio TSV by thermal chemical vapor deposition (CVD) technique has been carried out. Both microstructural and μ-Raman studies on cross-sectional graphene-TSV samples confirmed that the continuous formation of MLG all along the TSV side wall for the CVD growth temperatures of 650°C and above, and it may be used as thermal TSVs for heat removal in the stacked tiers of 3D-LSI/IC.

Original language	English
Title of host publication	IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728148700
DOIs	https://doi.org/10.1109/3DIC48104.2019.9058853
Publication status	Published - 2019 Oct
Event	2019 IEEE International 3D Systems Integration Conference, 3DIC 2019 - Sendai, Japan Duration: 2019 Oct 8 → 2019 Oct 10

Publication series

Name	IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019

Conference

Conference	2019 IEEE International 3D Systems Integration Conference, 3DIC 2019
Country/Territory	Japan
City	Sendai
Period	19/10/8 → 19/10/10

Keywords

Electroless Ni
Graphene-TSV
μ-Raman spectra

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/3DIC48104.2019.9058853

Cite this

Mariappan, M., Koyanagi, M., & Fukushima, T. (2019). Growth Optimization of Multi-Layer Graphene for Thermal-TSV Application in 3D-LSI. In IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019 [9058853] (IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/3DIC48104.2019.9058853

Growth Optimization of Multi-Layer Graphene for Thermal-TSV Application in 3D-LSI. / Mariappan, Murugesan; Koyanagi, Mitsumasa; Fukushima, Takafumi.

IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 9058853 (IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mariappan, M, Koyanagi, M & Fukushima, T 2019, Growth Optimization of Multi-Layer Graphene for Thermal-TSV Application in 3D-LSI. in IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019., 9058853, IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International 3D Systems Integration Conference, 3DIC 2019, Sendai, Japan, 19/10/8. https://doi.org/10.1109/3DIC48104.2019.9058853

Mariappan M, Koyanagi M, Fukushima T. Growth Optimization of Multi-Layer Graphene for Thermal-TSV Application in 3D-LSI. In IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 9058853. (IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019). doi: 10.1109/3DIC48104.2019.9058853

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title = "Growth Optimization of Multi-Layer Graphene for Thermal-TSV Application in 3D-LSI",

abstract = "A feasibility study for the continuous formation of multi-layer graphene (MLG) on both through-Si-via (TSV) top surface and all through the TSV sidewall and the bottom surface of high-Aspect-ratio TSV by thermal chemical vapor deposition (CVD) technique has been carried out. Both microstructural and μ-Raman studies on cross-sectional graphene-TSV samples confirmed that the continuous formation of MLG all along the TSV side wall for the CVD growth temperatures of 650°C and above, and it may be used as thermal TSVs for heat removal in the stacked tiers of 3D-LSI/IC.",

keywords = "Electroless Ni, Graphene-TSV, μ-Raman spectra",

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AB - A feasibility study for the continuous formation of multi-layer graphene (MLG) on both through-Si-via (TSV) top surface and all through the TSV sidewall and the bottom surface of high-Aspect-ratio TSV by thermal chemical vapor deposition (CVD) technique has been carried out. Both microstructural and μ-Raman studies on cross-sectional graphene-TSV samples confirmed that the continuous formation of MLG all along the TSV side wall for the CVD growth temperatures of 650°C and above, and it may be used as thermal TSVs for heat removal in the stacked tiers of 3D-LSI/IC.

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KW - μ-Raman spectra

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Growth Optimization of Multi-Layer Graphene for Thermal-TSV Application in 3D-LSI

Abstract

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Keywords

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