Growth of ZnSe on misoriented GaAs(1 1 0) surface by molecular beam epitaxy

K. W. Koh, M. W. Cho, Z. Zhu, T. Hanada, M. Isshiki, T. Yao

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3 Citations (Scopus)


Heteroepitaxial layers of ZnSe were grown on GaAs(1 1 0)-just and misoriented GaAs(1 1 0) surfaces by molecular beam epitaxy (MBE). Facet free ZnSe heteroepitaxial films are achieved by growth on GaAs(1 1 0)6°-off substrates, while ZnSe on GaAs(1 1 0)-just shows the formation of facets aligned along the [0 0 1] direction. A very low etch-pit density (EPD), ∼104/cm2, is achieved for ZnSe on GaAs(1 1 0) 6°-off surface without the use of GaAs buffer layer. Channeling backscattering spectra and X-ray rocking curve results show that good heterointerface and epitaxial layers, grown in the same orientation as the GaAs(1 1 0) substrate, are obtained.

Original languageEnglish
Pages (from-to)46-50
Number of pages5
JournalJournal of Crystal Growth
Publication statusPublished - 1998 Jan 1


  • Channeling backscattering spectra
  • Etch-pit density (EPD)
  • Facet
  • MBE
  • X-ray rocking curve
  • ZnSe

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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