Growth of ZnSe on GaAs(1 1 0) surfaces by molecular beam epitaxy

K. W. Koh, M. W. Cho, Z. Zhu, T. Hanada, K. H. Yoo, M. Isshiki, T. Yao

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Single crystal films of ZnSe have been grown on nonpolar GaAs(1 1 0) surfaces by molecular beam epitaxy (MBE). The epitaxial films have been characterized by in situ reflection high-energy electron diffraction (RHEED), ex situ scanning electron microscopy (SEM) and X-ray diffraction. RHEED and SEM images of the surfaces reveal the formation of facets which are aligned along the [0 0 1] direction. The formation of facets indicates that ZnSe growth on the (1 1 0) surface proceeds 6°-13° off the vicinal (1 1 0) surface. Facet-free ZnSe surface has been successfully grown on a GaAs(1 1 0) 6°-off the substrate.

Original languageEnglish
Pages (from-to)528-534
Number of pages7
JournalJournal of Crystal Growth
Issue number4
Publication statusPublished - 1998 Mar 7


  • Facet
  • Facet-free
  • GaAs(1 1 0)
  • MBE
  • Nonpolar
  • ZnSe

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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