Growth of wurtzite InN using MOVPE and its optical characteristics

T. Matsuoka, H. Okamoto, M. Nakao

Research output: Contribution to journalConference articlepeer-review

25 Citations (Scopus)

Abstract

The phase diagram for wurtzite InN epitaxial growth using metalorganic vapor phase epitaxy was established. InN films grown under optimized conditions had high quality, as confirmed by confocal micro-Raman scattering, X-ray diffraction, and reflection high-energy-electron diffraction. InN showed a bandgap energy Eg of 0.8 to 1.0 eV and 0.7 to 0.8 eV as measured by optical absorption and photoluminescence, respectively. From the band-gap bowing of InGaN and the relationship between the band gap and bond length, E g of InN seems to be near 0.8 eV. This value is less than half the value reported using poly-crystals up to the 1990s. The temperature dependence of Eg is very small and this temperature stability will of great advantage to devices.

Original languageEnglish
Pages (from-to)2806-2809
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Growth of wurtzite InN using MOVPE and its optical characteristics'. Together they form a unique fingerprint.

Cite this