The phase diagram for wurtzite InN epitaxial growth using metalorganic vapor phase epitaxy was established. InN films grown under optimized conditions had high quality, as confirmed by confocal micro-Raman scattering, X-ray diffraction, and reflection high-energy-electron diffraction. InN showed a bandgap energy Eg of 0.8 to 1.0 eV and 0.7 to 0.8 eV as measured by optical absorption and photoluminescence, respectively. From the band-gap bowing of InGaN and the relationship between the band gap and bond length, E g of InN seems to be near 0.8 eV. This value is less than half the value reported using poly-crystals up to the 1990s. The temperature dependence of Eg is very small and this temperature stability will of great advantage to devices.
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - 2003 Dec 1|
|Event||5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan|
Duration: 2003 May 25 → 2003 May 30
ASJC Scopus subject areas
- Condensed Matter Physics