TY - GEN
T1 - Growth of transparent conducting Nb-doped anatase TiO2 thin films on glass using seed layers
AU - Yamada, N.
AU - Hitosugi, T.
AU - Nakao, S.
AU - Kasai, J.
AU - Hirose, Y.
AU - Hoang, N. L.H.
AU - Shimada, T.
AU - Hasegawa, T.
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2009
Y1 - 2009
N2 - We report recent progress on sputter-growth of Nb-doped anatase TiO 2 (TNO) polycrystalline films, being a promising ITO-alternative transparent conductor. In order to achieve low resistivity (ρ) in TNO, it is necessary to grow anatase phase under reducing atmospheres. However, growth of TNO polycrystalline films on glass under such conditions tends to stabilize rutile phase with higher resistivity. To overcame this difficulty, we have developed a bi-layer technique using a TNO self seed-layer, which prevents the formation of the rutile phase even under reducing growth conditions. As a result, we succeeded in directly fabricating TNO polycrystalline films with ρ of ∼1×103 Ω cm and visible transmittance of 60 ∼ 80%, although we still need to further improve these properties towards practical applications. By comparing dc transport properties with optically deduced ones, we discuss material parameters that limit carrier transport in presently obtained TNO polycrystalline films.
AB - We report recent progress on sputter-growth of Nb-doped anatase TiO 2 (TNO) polycrystalline films, being a promising ITO-alternative transparent conductor. In order to achieve low resistivity (ρ) in TNO, it is necessary to grow anatase phase under reducing atmospheres. However, growth of TNO polycrystalline films on glass under such conditions tends to stabilize rutile phase with higher resistivity. To overcame this difficulty, we have developed a bi-layer technique using a TNO self seed-layer, which prevents the formation of the rutile phase even under reducing growth conditions. As a result, we succeeded in directly fabricating TNO polycrystalline films with ρ of ∼1×103 Ω cm and visible transmittance of 60 ∼ 80%, although we still need to further improve these properties towards practical applications. By comparing dc transport properties with optically deduced ones, we discuss material parameters that limit carrier transport in presently obtained TNO polycrystalline films.
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M3 - Conference contribution
AN - SCOPUS:77954297244
SN - 9781617383922
T3 - Materials Research Society Symposium Proceedings
SP - 15
EP - 24
BT - Transparent Conductors and Semiconductors for Optoelectronics
T2 - 2009 MRS Fall Meeting
Y2 - 30 November 2009 through 4 December 2009
ER -