Growth of topological insulator Bi2Te3 ultrathin films on Si(111) investigated by low-energy electron microscopy

H. W. Liu, H. T. Yuan, N. Fukui, Ling Zhang, J. F. Jia, Y. Iwasa, M. W. Chen, T. Hashizume, Toshio Sakurai, Q. K. Xue

    Research output: Contribution to journalArticle

    33 Citations (Scopus)

    Abstract

    The molecular beam epitaxy growth of topological insulator Bi 2Te3 thin films on Si(111) substrates has been investigated in situ by low-energy electron microscopy. The crystal structure and surface morphology during growth were directly revealed, which enables us to identify the optimal growth conditions for single crystalline Bi 2Te3 films. The formation of thin films is preceded by several surface structures, including a wetting layer and a Te/Bi-terminated Si(111)-1× 1 reconstruction. Raman scattering spectra and AFM measurements indicate that, under Te-rich conditions, single crystalline films of Bi 2Te3 grow along the [111] direction in a layer-by-layer mode. Transport measurements prove the insulating behavior of the films grown in this way.

    Original languageEnglish
    Pages (from-to)4491-4493
    Number of pages3
    JournalCrystal Growth and Design
    Volume10
    Issue number10
    DOIs
    Publication statusPublished - 2010 Oct 6

    ASJC Scopus subject areas

    • Chemistry(all)
    • Materials Science(all)
    • Condensed Matter Physics

    Fingerprint Dive into the research topics of 'Growth of topological insulator Bi<sub>2</sub>Te<sub>3</sub> ultrathin films on Si(111) investigated by low-energy electron microscopy'. Together they form a unique fingerprint.

  • Cite this

    Liu, H. W., Yuan, H. T., Fukui, N., Zhang, L., Jia, J. F., Iwasa, Y., Chen, M. W., Hashizume, T., Sakurai, T., & Xue, Q. K. (2010). Growth of topological insulator Bi2Te3 ultrathin films on Si(111) investigated by low-energy electron microscopy. Crystal Growth and Design, 10(10), 4491-4493. https://doi.org/10.1021/cg1007457