Growth of single-phase CuInGaSe2 photo-absorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source

M. Sugiyama, A. Kinoshita, M. Fukaya, H. Nakanishi, S. F. Chichibu

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Selenization growth of purely single-phase, polycrystalline CuIn1 - xGaxSe2 (0 ≤ x ≤ 1) alloy films was demonstrated using a less-hazardous metalorganic selenide, diethylselenide [(C2H5)2Se: DESe], without additional thermal annealing. Approximately 2.0-μm-thick films of the alloys exhibited X-ray diffraction peaks originating exclusively from the chalcopyrite structure. Low temperature photoluminescence spectra of the alloy films were dominated by a couple of characteristic donor-acceptor pair emissions that are particular to the state-of-the-art CuInGaSe2 photo-absorbing layers.

Original languageEnglish
Pages (from-to)5867-5870
Number of pages4
JournalThin Solid Films
Volume515
Issue number15 SPEC. ISS.
DOIs
Publication statusPublished - 2007 May 31
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Growth of single-phase CuInGaSe<sub>2</sub> photo-absorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source'. Together they form a unique fingerprint.

Cite this