Growth of single-phase CuInGaSe2 photo-absorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source

M. Sugiyama; A. Kinoshita; M. Fukaya; H. Nakanishi; S. F. Chichibu

doi:10.1016/j.tsf.2006.12.061

Growth of single-phase CuInGaSe₂ photo-absorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source

M. Sugiyama, A. Kinoshita, M. Fukaya, H. Nakanishi, S. F. Chichibu

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Selenization growth of purely single-phase, polycrystalline CuIn_{1 - x}Ga_xSe₂ (0 ≤ x ≤ 1) alloy films was demonstrated using a less-hazardous metalorganic selenide, diethylselenide [(C₂H₅)₂Se: DESe], without additional thermal annealing. Approximately 2.0-μm-thick films of the alloys exhibited X-ray diffraction peaks originating exclusively from the chalcopyrite structure. Low temperature photoluminescence spectra of the alloy films were dominated by a couple of characteristic donor-acceptor pair emissions that are particular to the state-of-the-art CuInGaSe₂ photo-absorbing layers.

Original language	English
Pages (from-to)	5867-5870
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	15 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2006.12.061
Publication status	Published - 2007 May 31
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2006.12.061

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title = "Growth of single-phase CuInGaSe2 photo-absorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source",

abstract = "Selenization growth of purely single-phase, polycrystalline CuIn1 - xGaxSe2 (0 ≤ x ≤ 1) alloy films was demonstrated using a less-hazardous metalorganic selenide, diethylselenide [(C2H5)2Se: DESe], without additional thermal annealing. Approximately 2.0-μm-thick films of the alloys exhibited X-ray diffraction peaks originating exclusively from the chalcopyrite structure. Low temperature photoluminescence spectra of the alloy films were dominated by a couple of characteristic donor-acceptor pair emissions that are particular to the state-of-the-art CuInGaSe2 photo-absorbing layers.",

author = "M. Sugiyama and A. Kinoshita and M. Fukaya and H. Nakanishi and Chichibu, {S. F.}",

note = "Funding Information: The authors would like to thank K. Harada, N. Kawashita, Y. Maru, T. Nakagawa, and S. Nakazono for their help in the experiments. This work was supported in part by the 21st Century COE program, “Promotion of Creative Interdisciplinary Materials Science for Novel Functions” and Grant-in-Aid for Scientific Research No. 1636046 under MEXT, Japan.",

year = "2007",

month = may,

day = "31",

doi = "10.1016/j.tsf.2006.12.061",

language = "English",

volume = "515",

pages = "5867--5870",

journal = "Thin Solid Films",

issn = "0040-6090",

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number = "15 SPEC. ISS.",

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T1 - Growth of single-phase CuInGaSe2 photo-absorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source

AU - Sugiyama, M.

AU - Kinoshita, A.

AU - Fukaya, M.

AU - Nakanishi, H.

AU - Chichibu, S. F.

N1 - Funding Information: The authors would like to thank K. Harada, N. Kawashita, Y. Maru, T. Nakagawa, and S. Nakazono for their help in the experiments. This work was supported in part by the 21st Century COE program, “Promotion of Creative Interdisciplinary Materials Science for Novel Functions” and Grant-in-Aid for Scientific Research No. 1636046 under MEXT, Japan.

PY - 2007/5/31

Y1 - 2007/5/31

N2 - Selenization growth of purely single-phase, polycrystalline CuIn1 - xGaxSe2 (0 ≤ x ≤ 1) alloy films was demonstrated using a less-hazardous metalorganic selenide, diethylselenide [(C2H5)2Se: DESe], without additional thermal annealing. Approximately 2.0-μm-thick films of the alloys exhibited X-ray diffraction peaks originating exclusively from the chalcopyrite structure. Low temperature photoluminescence spectra of the alloy films were dominated by a couple of characteristic donor-acceptor pair emissions that are particular to the state-of-the-art CuInGaSe2 photo-absorbing layers.

AB - Selenization growth of purely single-phase, polycrystalline CuIn1 - xGaxSe2 (0 ≤ x ≤ 1) alloy films was demonstrated using a less-hazardous metalorganic selenide, diethylselenide [(C2H5)2Se: DESe], without additional thermal annealing. Approximately 2.0-μm-thick films of the alloys exhibited X-ray diffraction peaks originating exclusively from the chalcopyrite structure. Low temperature photoluminescence spectra of the alloy films were dominated by a couple of characteristic donor-acceptor pair emissions that are particular to the state-of-the-art CuInGaSe2 photo-absorbing layers.

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SN - 0040-6090

VL - 515

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 15 SPEC. ISS.

ER -

Growth of single-phase CuInGaSe₂ photo-absorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source

Abstract

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