Growth of silicon nanowires on H-terminated Si {111} surface templates studied by transmission electron microscopy

Nobuhiko Ozaki, Yutaka Ohno, Jun Kikkawa, Seiji Takeda

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We have studied the growth of silicon nanowires (SiNWs) by means of transmission electron microscopy. SiNWs are grown from nanocatalysts via the Vapor-Liquid-Solid (VLS) mechanism using silane (SiH4) gas as a source gas. The nanocatalysts are prepared on a hydrogen (H)-terminated Si surface. We have examined the formation mechanism of nanocatalysts on H-terminated surface and have observed several structural variants of SiNWs. According to the study we have suggested that many structural variations of SiNWs are possible, which modify the structural properties of SiNWs to great extents.

Original languageEnglish
Pages (from-to)i25-i29
JournalJournal of Electron Microscopy
Volume54
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2005 Sep

Keywords

  • CL spectroscopy
  • H-terminated Si surface
  • HRTEM
  • Nanocatalysts
  • Silicon nanowires
  • Structural variations of silicon nanowires

ASJC Scopus subject areas

  • Instrumentation

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