Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer

Noritaka Usami, Kentaro Kutsukake, Wugen Pan, Kozo Fujiwara, Toru Ujihara, Baoping Zhang, Takashi Yokoyama, Kazuo Nakajima

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

We report on a simple approach for fabrication of SiGe-on-insulator (SGOI), which contains the growth of Ge on a Si-on-insulator (SOI) substrate and following high-temperature annealing. We discuss the guiding principle for choice of the processing parameters to obtain high-quality SGOI. Furthermore, SGOI was utilized as a substrate for subsequent epitaxial growth of a strained-Si layer. As a result, fluctuation of the strain in the Si film on SGOI was found to be suppressed compared with that on a conventional SiGe virtual substrate, which shows that SGOI grown by our method is promising for the substrate to grow high-mobility strained-Si channel layers.

Original languageEnglish
Pages (from-to)e1203-e1207
JournalJournal of Crystal Growth
Volume275
Issue number1-2
DOIs
Publication statusPublished - 2005 Feb 15

Keywords

  • A3. Molecular beam epitaxy
  • B1. Alloys
  • B2. Semiconducting materials
  • B3. High electron mobility transistors

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer'. Together they form a unique fingerprint.

Cite this