TY - JOUR
T1 - Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer
AU - Usami, Noritaka
AU - Kutsukake, Kentaro
AU - Pan, Wugen
AU - Fujiwara, Kozo
AU - Ujihara, Toru
AU - Zhang, Baoping
AU - Yokoyama, Takashi
AU - Nakajima, Kazuo
N1 - Funding Information:
The authors would like to acknowledge Gen Sazaki, and Kentaro Sawano for fruitful discussions. Arnold Cafe Alguno is also acknowledged for his critical reading of this manuscript. This work was in part supported by Industrial Technology Research Grant Program from NEDO of Japan and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology.
PY - 2005/2/15
Y1 - 2005/2/15
N2 - We report on a simple approach for fabrication of SiGe-on-insulator (SGOI), which contains the growth of Ge on a Si-on-insulator (SOI) substrate and following high-temperature annealing. We discuss the guiding principle for choice of the processing parameters to obtain high-quality SGOI. Furthermore, SGOI was utilized as a substrate for subsequent epitaxial growth of a strained-Si layer. As a result, fluctuation of the strain in the Si film on SGOI was found to be suppressed compared with that on a conventional SiGe virtual substrate, which shows that SGOI grown by our method is promising for the substrate to grow high-mobility strained-Si channel layers.
AB - We report on a simple approach for fabrication of SiGe-on-insulator (SGOI), which contains the growth of Ge on a Si-on-insulator (SOI) substrate and following high-temperature annealing. We discuss the guiding principle for choice of the processing parameters to obtain high-quality SGOI. Furthermore, SGOI was utilized as a substrate for subsequent epitaxial growth of a strained-Si layer. As a result, fluctuation of the strain in the Si film on SGOI was found to be suppressed compared with that on a conventional SiGe virtual substrate, which shows that SGOI grown by our method is promising for the substrate to grow high-mobility strained-Si channel layers.
KW - A3. Molecular beam epitaxy
KW - B1. Alloys
KW - B2. Semiconducting materials
KW - B3. High electron mobility transistors
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U2 - 10.1016/j.jcrysgro.2004.11.141
DO - 10.1016/j.jcrysgro.2004.11.141
M3 - Conference article
AN - SCOPUS:15844387696
VL - 275
SP - e1203-e1207
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-2
ER -