Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature

Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Murakami, K. Nakajima

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

We developed an automatic feedback control system of the crystal-melt interface position to keep the temperature at the interface constant during growth, and demonstrate its successful application to grow Ge-rich SiGe bulk crystals with uniform composition. In this system, the position of the crystal-melt interface was automatically detected by analyzing the images captured using in situ monitoring system based on charge-coupled-devices camera, and the pulling rate of the crucible was corrected at every 1min. The system was found to be effective to keep the crystal-melt interface position during growth even when the variation of the growth rate is quite large. Especially, the interface position was kept for 470 h during growth of Ge-rich SiGe bulk crystal when we started with a long growth melt of 80 mm. As a result, a 23 mm-long Si0.22Ge0.78 bulk crystal with uniform composition was obtained thanks to the constancy of the growth temperature during growth through the control of the interface position. Our technique opens a possibility to put multicomponent bulk crystal in a practical use.

Original languageEnglish
Pages (from-to)298-304
Number of pages7
JournalJournal of Crystal Growth
Volume250
Issue number3-4
DOIs
Publication statusPublished - 2003 Apr

Keywords

  • A1. Control of growth temperature
  • A1. Feedback control
  • A1. In situ monitoring
  • A2. Growth from melt
  • B1. Germanium silicon alloys
  • B1. Multicomponent substrate for heterostructures

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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