TY - JOUR
T1 - Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt interface using in situ monitoring system
AU - Azuma, Y.
AU - Usami, N.
AU - Ujihara, T.
AU - Sazaki, G.
AU - Murakami, Y.
AU - Miyashita, S.
AU - Fujiwara, K.
AU - Nakajima, K.
N1 - Funding Information:
The authors would like to acknowledge S. Kodama, I. Yonenaga, H. Tezuka, and Y. Shiraki for instructive advices, Y. Waga for his technical support. This work was in part supported by the Grant-in-Aids for Scientific Research (No. 11305001 and Priority Areas (B) No. 751) from the Ministry of Education, Science, Sports and Culture, and by “Ground Research for Space Utilization” promoted by National Space Development Agency (NASDA) and the Japan Space Forum. N.U. acknowledges the support from the Foundation of Ando Laboratory. T.U. acknowledges the support from the Murata Science Foundation and Kawasaki Steel 21st Century Foundation.
PY - 2001/4
Y1 - 2001/4
N2 - A SiGe bulk crystal with uniform composition was successfully fabricated by clarifying and controlling the growth parameters at the crystal-melt interface. An apparatus was developed for the direct in situ observation and precise control of the interface parameters such as the temperature and the position. The dynamical change of the growth rate of a SiGe bulk crystal in a temperature gradient can be known by utilizing the apparatus. The growing crystal was continuously pulled down at the pulling rate balanced to the growth rate to keep the interface temperature constant, which resulted in the excellent uniformity of the grown crystal. Our technique opened the possibility to incorporate multicomponent semiconductor substrates to the semiconductor heterostructure technology.
AB - A SiGe bulk crystal with uniform composition was successfully fabricated by clarifying and controlling the growth parameters at the crystal-melt interface. An apparatus was developed for the direct in situ observation and precise control of the interface parameters such as the temperature and the position. The dynamical change of the growth rate of a SiGe bulk crystal in a temperature gradient can be known by utilizing the apparatus. The growing crystal was continuously pulled down at the pulling rate balanced to the growth rate to keep the interface temperature constant, which resulted in the excellent uniformity of the grown crystal. Our technique opened the possibility to incorporate multicomponent semiconductor substrates to the semiconductor heterostructure technology.
KW - A1. In situ monitoring
KW - A1. Interfaces
KW - A1. Substrates
KW - A1. Supersaturated solutions
KW - A2. Growth from melt
KW - B1. Germanium silicon alloys
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U2 - 10.1016/S0022-0248(01)00974-5
DO - 10.1016/S0022-0248(01)00974-5
M3 - Article
AN - SCOPUS:0035307407
VL - 224
SP - 204
EP - 211
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3-4
ER -