Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt interface using in situ monitoring system

Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, Y. Murakami, S. Miyashita, K. Fujiwara, K. Nakajima

Research output: Contribution to journalArticlepeer-review

49 Citations (Scopus)

Abstract

A SiGe bulk crystal with uniform composition was successfully fabricated by clarifying and controlling the growth parameters at the crystal-melt interface. An apparatus was developed for the direct in situ observation and precise control of the interface parameters such as the temperature and the position. The dynamical change of the growth rate of a SiGe bulk crystal in a temperature gradient can be known by utilizing the apparatus. The growing crystal was continuously pulled down at the pulling rate balanced to the growth rate to keep the interface temperature constant, which resulted in the excellent uniformity of the grown crystal. Our technique opened the possibility to incorporate multicomponent semiconductor substrates to the semiconductor heterostructure technology.

Original languageEnglish
Pages (from-to)204-211
Number of pages8
JournalJournal of Crystal Growth
Volume224
Issue number3-4
DOIs
Publication statusPublished - 2001 Apr

Keywords

  • A1. In situ monitoring
  • A1. Interfaces
  • A1. Substrates
  • A1. Supersaturated solutions
  • A2. Growth from melt
  • B1. Germanium silicon alloys

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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