Growth of semi-polar InN layer on GaAs (1 1 0) surface by MOVPE

Hisashi Murakami, Hyun Chol Cho, Mayu Suematsu, Rie Togashi, Yoshinao Kumagai, Ryuichi Toba, Akinori Koukitu

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6 Citations (Scopus)

Abstract

Investigation of the hetero-epitaxial growth of InN on a GaAs (1 1 0) substrate was performed by metalorganic vapor phase epitaxy in order to realize the formation of semi-polar InN layer on it. The orientation relationship between InN and GaAs (1 1 0) was confirmed by 2θ-ω and pole figure of X-ray diffraction measurements. It was found that the crystalline orientation strongly depended on the growth temperature; mixed domains of (1 0 1 3) and (1 1 2 0) InN have been grown on GaAs (1 1 0) surfaces when the growth temperature was below 550 °C, while (1 0 1 3) semi-polar InN layers could be grown by increasing the growth temperature above 575 °C. It was also found that the in-plane anisotropy of semi-polar InN layer was suppressed by increasing the growth temperature. Epitaxial relationship of the InN with the GaAs (1 1 0) substrate was InN (1 0 1 3) plane parallel to GaAs (1 1 0) and InN (2 1 1 0) plane parallel to GaAs(1 1 0).

Original languageEnglish
Pages (from-to)479-482
Number of pages4
JournalJournal of Crystal Growth
Volume318
Issue number1
DOIs
Publication statusPublished - 2011 Mar 1

Keywords

  • A1. Surface structure
  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting indium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Murakami, H., Chol Cho, H., Suematsu, M., Togashi, R., Kumagai, Y., Toba, R., & Koukitu, A. (2011). Growth of semi-polar InN layer on GaAs (1 1 0) surface by MOVPE. Journal of Crystal Growth, 318(1), 479-482. https://doi.org/10.1016/j.jcrysgro.2010.10.027