Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

Ching Hsueh Chiu, Da Wei Lin, Zhen Yu Li, Shih Chun Ling, Hao Chung Kuo, Tien Chang Lu, Shing Chung Wang, Wei Tasi Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We present a study of semi-polar (1-1̄01) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices VI
DOIs
Publication statusPublished - 2011
EventGallium Nitride Materials and Devices VI - San Francisco, CA, United States
Duration: 2011 Jan 242011 Jan 27

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7939
ISSN (Print)0277-786X

Other

OtherGallium Nitride Materials and Devices VI
CountryUnited States
CitySan Francisco, CA
Period11/1/2411/1/27

Keywords

  • LEDs
  • MOCVD
  • Si
  • efficiency droop
  • semi-polar

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate'. Together they form a unique fingerprint.

Cite this