@inproceedings{14194b08ae784c32929b92a5fb540bd5,
title = "Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate",
abstract = "We present a study of semi-polar (1-{\=1}01) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.",
keywords = "LEDs, MOCVD, Si, efficiency droop, semi-polar",
author = "Chiu, {Ching Hsueh} and Lin, {Da Wei} and Li, {Zhen Yu} and Ling, {Shih Chun} and Kuo, {Hao Chung} and Lu, {Tien Chang} and Wang, {Shing Chung} and Liao, {Wei Tasi} and Tomoyuki Tanikawa and Yoshio Honda and Masahito Yamaguchi and Nobuhiko Sawaki",
year = "2011",
doi = "10.1117/12.876656",
language = "English",
isbn = "9780819484765",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Gallium Nitride Materials and Devices VI",
note = "Gallium Nitride Materials and Devices VI ; Conference date: 24-01-2011 Through 27-01-2011",
}