Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

Ching Hsueh Chiu; Da Wei Lin; Zhen Yu Li; Shih Chun Ling; Hao Chung Kuo; Tien Chang Lu; Shing Chung Wang; Wei Tasi Liao; Tomoyuki Tanikawa; Yoshio Honda; Masahito Yamaguchi; Nobuhiko Sawaki

doi:10.1117/12.876656

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

Ching Hsueh Chiu, Da Wei Lin, Zhen Yu Li, Shih Chun Ling, Hao Chung Kuo, Tien Chang Lu, Shing Chung Wang, Wei Tasi Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

Materials Design Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We present a study of semi-polar (1-1̄01) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.

Original language	English
Title of host publication	Gallium Nitride Materials and Devices VI
DOIs	https://doi.org/10.1117/12.876656
Publication status	Published - 2011
Event	Gallium Nitride Materials and Devices VI - San Francisco, CA, United States Duration: 2011 Jan 24 → 2011 Jan 27

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7939
ISSN (Print)	0277-786X

Other

Other	Gallium Nitride Materials and Devices VI
Country/Territory	United States
City	San Francisco, CA
Period	11/1/24 → 11/1/27

Keywords

LEDs
MOCVD
Si
efficiency droop
semi-polar

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.876656

Cite this

Chiu, C. H., Lin, D. W., Li, Z. Y., Ling, S. C., Kuo, H. C., Lu, T. C., Wang, S. C., Liao, W. T., Tanikawa, T., Honda, Y., Yamaguchi, M., & Sawaki, N. (2011). Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate. In Gallium Nitride Materials and Devices VI [79391X] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7939). https://doi.org/10.1117/12.876656

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate. / Chiu, Ching Hsueh; Lin, Da Wei; Li, Zhen Yu; Ling, Shih Chun; Kuo, Hao Chung; Lu, Tien Chang; Wang, Shing Chung; Liao, Wei Tasi; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Sawaki, Nobuhiko.

Gallium Nitride Materials and Devices VI. 2011. 79391X (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7939).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chiu, CH, Lin, DW, Li, ZY, Ling, SC, Kuo, HC, Lu, TC, Wang, SC, Liao, WT, Tanikawa, T, Honda, Y, Yamaguchi, M & Sawaki, N 2011, Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate. in Gallium Nitride Materials and Devices VI., 79391X, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7939, Gallium Nitride Materials and Devices VI, San Francisco, CA, United States, 11/1/24. https://doi.org/10.1117/12.876656

Chiu, Ching Hsueh ; Lin, Da Wei ; Li, Zhen Yu ; Ling, Shih Chun ; Kuo, Hao Chung ; Lu, Tien Chang ; Wang, Shing Chung ; Liao, Wei Tasi ; Tanikawa, Tomoyuki ; Honda, Yoshio ; Yamaguchi, Masahito ; Sawaki, Nobuhiko. / Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate. Gallium Nitride Materials and Devices VI. 2011. (Proceedings of SPIE - The International Society for Optical Engineering).

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title = "Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate",

abstract = "We present a study of semi-polar (1-{\=1}01) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.",

keywords = "LEDs, MOCVD, Si, efficiency droop, semi-polar",

author = "Chiu, {Ching Hsueh} and Lin, {Da Wei} and Li, {Zhen Yu} and Ling, {Shih Chun} and Kuo, {Hao Chung} and Lu, {Tien Chang} and Wang, {Shing Chung} and Liao, {Wei Tasi} and Tomoyuki Tanikawa and Yoshio Honda and Masahito Yamaguchi and Nobuhiko Sawaki",

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series = "Proceedings of SPIE - The International Society for Optical Engineering",

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AU - Chiu, Ching Hsueh

AU - Lin, Da Wei

AU - Li, Zhen Yu

AU - Ling, Shih Chun

AU - Kuo, Hao Chung

AU - Lu, Tien Chang

AU - Wang, Shing Chung

AU - Liao, Wei Tasi

AU - Tanikawa, Tomoyuki

AU - Honda, Yoshio

AU - Yamaguchi, Masahito

AU - Sawaki, Nobuhiko

PY - 2011

Y1 - 2011

N2 - We present a study of semi-polar (1-1̄01) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.

AB - We present a study of semi-polar (1-1̄01) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.

KW - LEDs

KW - MOCVD

KW - Si

KW - efficiency droop

KW - semi-polar

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BT - Gallium Nitride Materials and Devices VI

T2 - Gallium Nitride Materials and Devices VI

Y2 - 24 January 2011 through 27 January 2011

ER -

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

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