Abstract
MOVPE growth of uniform (11-22)GaN layer was attempted on a patterned (113)Si substrate. The growth of GaN was achieved on (1-11) facets of the Si selectively. The optimum design of the patterned substrate and the growth conditions were studied to get the semi-polar GaN layer with high optical and crystalline quality. The cathode-luminescence spectra showed a sharp edge emission peak of which half width was as narrow as 10 meV. The X-ray rocking curves showed that the (11-22) diffraction was as narrow as 300 arcsec.
| Original language | English |
|---|---|
| Pages (from-to) | 2966-2968 |
| Number of pages | 3 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 5 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2008 Dec 1 |
| Externally published | Yes |
| Event | 34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan Duration: 2007 Oct 15 → 2007 Oct 18 |
ASJC Scopus subject areas
- Condensed Matter Physics
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Tanikawa, T., Hikosaka, T., Honda, Y., Yamaguchi, M., & Sawaki, N. (2008). Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE. Physica Status Solidi (C) Current Topics in Solid State Physics, 5(9), 2966-2968. https://doi.org/10.1002/pssc.200779236