MOVPE growth of uniform (11-22)GaN layer was attempted on a patterned (113)Si substrate. The growth of GaN was achieved on (1-11) facets of the Si selectively. The optimum design of the patterned substrate and the growth conditions were studied to get the semi-polar GaN layer with high optical and crystalline quality. The cathode-luminescence spectra showed a sharp edge emission peak of which half width was as narrow as 10 meV. The X-ray rocking curves showed that the (11-22) diffraction was as narrow as 300 arcsec.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2008 Dec 1|
|Event||34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan|
Duration: 2007 Oct 15 → 2007 Oct 18
ASJC Scopus subject areas
- Condensed Matter Physics