Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE

Tomoyuki Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

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79 Citations (Scopus)


MOVPE growth of uniform (11-22)GaN layer was attempted on a patterned (113)Si substrate. The growth of GaN was achieved on (1-11) facets of the Si selectively. The optimum design of the patterned substrate and the growth conditions were studied to get the semi-polar GaN layer with high optical and crystalline quality. The cathode-luminescence spectra showed a sharp edge emission peak of which half width was as narrow as 10 meV. The X-ray rocking curves showed that the (11-22) diffraction was as narrow as 300 arcsec.

Original languageEnglish
Pages (from-to)2966-2968
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number9
Publication statusPublished - 2008 Dec 1
Externally publishedYes
Event34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
Duration: 2007 Oct 152007 Oct 18

ASJC Scopus subject areas

  • Condensed Matter Physics


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