Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE

Tomoyuki Tanikawa; T. Hikosaka; Y. Honda; M. Yamaguchi; N. Sawaki

doi:10.1002/pssc.200779236

Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE

Tomoyuki Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

Research output: Contribution to journal › Conference article › peer-review

70 Citations (Scopus)

Abstract

MOVPE growth of uniform (11-22)GaN layer was attempted on a patterned (113)Si substrate. The growth of GaN was achieved on (1-11) facets of the Si selectively. The optimum design of the patterned substrate and the growth conditions were studied to get the semi-polar GaN layer with high optical and crystalline quality. The cathode-luminescence spectra showed a sharp edge emission peak of which half width was as narrow as 10 meV. The X-ray rocking curves showed that the (11-22) diffraction was as narrow as 300 arcsec.

Original language	English
Pages (from-to)	2966-2968
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	9
DOIs	https://doi.org/10.1002/pssc.200779236
Publication status	Published - 2008 Dec 1
Externally published	Yes
Event	34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan Duration: 2007 Oct 15 → 2007 Oct 18

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200779236

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title = "Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE",

abstract = "MOVPE growth of uniform (11-22)GaN layer was attempted on a patterned (113)Si substrate. The growth of GaN was achieved on (1-11) facets of the Si selectively. The optimum design of the patterned substrate and the growth conditions were studied to get the semi-polar GaN layer with high optical and crystalline quality. The cathode-luminescence spectra showed a sharp edge emission peak of which half width was as narrow as 10 meV. The X-ray rocking curves showed that the (11-22) diffraction was as narrow as 300 arcsec.",

author = "Tomoyuki Tanikawa and T. Hikosaka and Y. Honda and M. Yamaguchi and N. Sawaki",

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T1 - Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE

AU - Tanikawa, Tomoyuki

AU - Hikosaka, T.

AU - Honda, Y.

AU - Yamaguchi, M.

AU - Sawaki, N.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - MOVPE growth of uniform (11-22)GaN layer was attempted on a patterned (113)Si substrate. The growth of GaN was achieved on (1-11) facets of the Si selectively. The optimum design of the patterned substrate and the growth conditions were studied to get the semi-polar GaN layer with high optical and crystalline quality. The cathode-luminescence spectra showed a sharp edge emission peak of which half width was as narrow as 10 meV. The X-ray rocking curves showed that the (11-22) diffraction was as narrow as 300 arcsec.

AB - MOVPE growth of uniform (11-22)GaN layer was attempted on a patterned (113)Si substrate. The growth of GaN was achieved on (1-11) facets of the Si selectively. The optimum design of the patterned substrate and the growth conditions were studied to get the semi-polar GaN layer with high optical and crystalline quality. The cathode-luminescence spectra showed a sharp edge emission peak of which half width was as narrow as 10 meV. The X-ray rocking curves showed that the (11-22) diffraction was as narrow as 300 arcsec.

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JO - Physica Status Solidi C: Conferences

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T2 - 34th International Symposium on Compound Semiconductors, ISCS-2007

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